Patent Assignment
Reel/Frame 018268/0048
Change of Name
Recorded: 2006-09-18
Received: 2006-09-18
Pages: 17
Assignor
NIKKO MATERIALS CO., LTD.
Executed: 1999-07-01
Assignee
NIPPON MINING & METALS CO., LTD.
10-1 TORANOMON 2-CHOME, MINATO-KU, TOKYO, JPX, JAPAN
Covered Properties
(21)
Epitaxial Growth Process
Application:
10/563,105 →
Epitaxial Growth Method and Substrate for Epitaxial Growth
Application:
10/534,695 →
Ii-Vi Compound Semiconductor Crystal and Photoelectric Conversion Device
Application:
11/115,182 →
Vapor-Phase Epitaxial Apparatus and Vapor Phase Epitaxial Method
Application:
10/515,969 →
Vapor-Phase Growth Apparatus
Application:
10/515,970 →
Cdte Single Crystal and Cdte Polycrystal, and Method for Preparation Thereof
Application:
10/505,588 →
Crystal Manufacturing Method
Application:
10/504,527 →
Production Method for Compound Semiconductor Single Crystal
Application:
10/502,228 →
Closed-loop drilling system using a high-speed communications network
Application:
10/878,775 →
Process for Producing Single Crystal of Compound Semiconductor and Crystal Growing Apparatus
Application:
10/497,916 →
Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device
Application:
10/472,446 →
Cdte-Base Compound Semiconductor Single Crystal for Electro-Optic Element
Application:
10/771,359 →
Method for Preparing Gan Based Compound Semiconductor Crystal
Application:
10/481,253 →
Chamfered Semiconductor Wafer and Method of Manufacturing the Same
Application:
10/472,518 →
''A Ii-Vi Compound Seminconductor Crystal
Application:
10/381,880 →
Product Management System, and Host Computer and Recorded Medium Used in the System
Application:
10/181,269 →
Cartridge Housing for Inhibiting Damage to Recording Media
Application:
10/183,232 →
Containment Assembly
Application:
10/029,537 →
Photoelectric Conversion Functional Element and Production Method Thereof
Application:
09/890,774 →
Crystal Growing Device and Method of Manufacturing Single Crystal
Application:
09/868,087 →
Process for Producing Compound Semiconductor Single Crystal
Application:
09/753,662 →