Method for preparing GaN based compound semiconductor crystal
View Patent ↗In a method for growing a GaN based compound semiconductor on a front surface of a substrate to obtain the GaN based compound semiconductor crystal in one body, because the gas for reducing and decomposing the substrate is supplied to the rear surface of the substrate and a heat treatment is carried out in a gas atmosphere in which the nitrogen partial pressure is not less than a predetermined value, in order to remove the substrate, it can be prevented that cracks are caused in the crystal, or fracture or warp is caused by causing strain of the GaN based compound semiconductor crystal in a cooling step.
1. A method for producing a GaN based compound semiconductor crystal, comprising:
growing a GaN based compound semiconductor on a front surface of a substrate to obtain the GaN based compound semiconductor crystal in one body; and
removing the substrate by supplying gas for reducing and decomposing the substrate to a rear surface of the substrate and by carrying out a heat treatment, in a hydrogen atmosphere in which a nitrogen gas partial pressure is not less than a dissociation pressure of the GaN based compound semiconductor at a heat treatment temperature by supplying a matter capable of supplying a nitrogen atom and in which a hydrogen gas partial pressure is at least not less than 80%, after the growing of the GaN based compound semiconductor.
2. The method for producing the GaN based compound semiconductor crystal, as claimed in claim 1 , wherein the matter capable of supplying the nitrogen atom is supplied so that a gas partial pressure thereof is at least not less than 1%.
3. The method for producing the GaN based compound semiconductor crystal, as claimed in claim 1 , wherein the matter capable of supplying the nitrogen atom is ammonia or hydrazine.
4. The method for producing the GaN based compound seminconductor crystal, as claimed in claim 2 , wherein the matter capable of supplying the nitrogen atom is ammonia or hydrazine.