CdTe single crystal and CdTe polycrystal, and method for preparation thereof
View Patent ↗A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0×10 9 Ω·cm is obtained by growing the crystal according to one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method by using a CdTe polycrystal, in which 50 to 200 ppmwt of chlorine is doped, as a raw material.
1. A method for producing a CdTe single crystal,
wherein the CdTe single crystal has a chlorine concentration between 0.1 and 1.0 ppmwt in the crystal and has a resistivity at room temperature of not less than 1.0×10 9 Ω·cm, and
the CdTe single crystal is obtained according to any one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method, by using as a raw material a CdTe polycrystal which is produced by doping 50 to 200 ppmwt of chlorine in a CdTe polycrystal which shows an n-type electric property of carrier concentration being not more than 1.0×10 15 cm −3 or a p-type electric property of carrier concentration being not more than 1.0×10 14 cm −3 in a state without doping the chlorine.
2. A method for producing a CdTe single crystal, comprising:
disposing a raw material which comprises Cd having a purity of not less than 99.9999 wt %, Te having a purity of not less than 99.9999 wt %, and cadmium chloride having a purity of not less than 99.99 wt % in a half-sealed inner container made of pBN;
vacuum-sealing a heat resistant outer container after putting the inner container made of pBN into the outer container;
carrying out synthetic reaction by melting the raw materials in the inner container made of pBN by heating the outer container containing the inner container with a heating device to increase temperature; and thereafter,
obtaining a CdTe single crystal having a chlorine concentration between 0.1 and 1.0 ppmwt in the crystal and having a resistivity of not less than 1.0×10 9 Ω·cm at room temperature according to any one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method, by using as a raw material a CdTe polycrystal which has a chlorine concentration between 50 and 200 ppmwt in the crystal and which is grown by decreasing gradually a temperature of the melted raw materials.