Electroless plating method and semiconductor wafer on which metal plating layer is formed
View Patent ↗It is an object of the present invention to provide a semiconductor wafer on which a thin, smooth, uniform and good adhesive electroless plating layer that can be suitable for a seed layer is formed, and to provide an electroless plating method which is suitable for use in the manufacture of such a semiconductor wafer. A semiconductor wafer is coated with a silane coupling agent which has a functional group that is able to capture a metal, and is further coated with an organic-solvent solution of a palladium compound such as palladium chloride or the like. Afterward, the wafer is electroless plated. As a result of such an electroless plating method, a semiconductor wafer having a thickness of 70 to 5000 angstroms and a mean surface roughness Ra of 10 to 100 angstroms can be obtained.
1. An electroless metal plating method comprising:
coating a mirror-surface to be plated with a solution of a silane coupling agent which has an azole group,
further coating the surface with an organic solvent solution of a palladium compound, and
electroless metal plating the surface.
2. An electroless plating method according to claim 1 , wherein a method of the coating is a spin coating.
3. A semiconductor wafer on which a metal plating layer is formed by a method according to claim 1 .
4. An electroless plating method according to claim 1 , wherein the organic solvent is isopropyl alcohol.
5. An electroless plating method according to claim 1 , wherein the organic solvent is methyl ethyl ketone.
6. An electroless plating method according to claim 1 , wherein the organic solvent is methanol.
7. An electroless plating method according to claim 1 , wherein the silane coupling agent is a reaction product of imidazole and γ-glycidoxypropyl-trimethoxysilane.
8. An electroless plating method according to claim 1 , wherein said surface to be plated is the surface of a silicon wafer.
9. An electroless plating method comprising:
coating a surface to be plated with a solution of a silane coupling agent which has an azole group,
further coating the surface with an organic solvent solution of a palladium compound,
electroless plating the surface with nickel, cobalt or an alloy of these metals, and
electroless plating the surface with copper.
10. An electroless plating method according to claim 9 , wherein the organic solvent is isopropyl alcohol.
11. An electroless plating method according to claim 9 , wherein the organic solvent is methyl ethyl ketone.
12. An electroless plating method according to claim 9 , wherein the organic solvent is methanol.
13. An electroless plating method according to claim 9 , wherein the silane coupling agent is a reaction product of imidazole and γ-glycidoxypropyl-trimethoxysilane.
14. An electroless plating method according to claim 9 , wherein said surface to be plated is the surface of a silicon wafer.
15. A semiconductor wafer on which an electroless plating layer with a thickness of 70 to 5000 angstroms and a mean surface roughness Ra of 10 to 100 angstroms is formed.
16. A semiconductor device which is manufactured from a semiconductor wafer according to claim 15 .