Tantalum sputtering target and method for preparation thereof
View Patent ↗Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including the steps of forging and recrystallization annealing, and thereafter rolling, a tantalum ingot or billet having been subject to melting and casting, and forming a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target. As a result, evenness (uniformity) of the film is enhanced, and quality of the sputter deposition is improved.
1. A method of manufacturing a tantalum sputtering target, comprising the steps of:
melting and casting a tantalum raw material to form a tantalum ingot or billet, and
forging and recrystallization annealing, and thereafter rolling, said tantalum ingot or billet to form a tantalum sputtering target having a target thickness and a crystal structure in which the (222) orientation is preferential in a disc shape or a convex lens shape at a position 10% of the target thickness from the center face of the target.
2. A method according to claim 1 , wherein formed is a crystal structure in which the (222) orientation is preferential at a position excluding a peripheral edge of the target.
3. A method according to claim 1 , wherein the crystal structure in which the (222) orientation is preferential in the disc shape or a convex lens shape is formed at a center portion of the target.
4. A method according to claim 1 , wherein formed is a crystal structure in which the (222) orientation is preferential at a position selected from a position immediately beneath an initial erosion portion of the target, a position of an erosion portion of the target when sputtering is performed, and a position in the vicinity thereof.
5. A method according to claim 1 , wherein said forging and recrystallization annealing step is repeated two or more times.
6. A method according to claim 1 , further comprising the step of kneading said tantalum ingot or billet.
7. A method according to claim 1 , wherein, after said forging step, said recrystallization annealing step is performed at a recrystallization temperature of up to 1673 K.
8. A method according to claim 1 , further comprising the steps of cross rolling said tantalum ingot or billet and applying a heat treatment to said tantalum ingot or billet after said forging step to prepare a tabular target.
9. A method according to claim 8 , wherein, after said rolling step, crystal homogenization annealing or straightening annealing is performed.
10. A method according to claim 1 , wherein an average crystal grain size of the target is made to be a fine crystal grain size of 80 μm or less.
11. A method according to claim 1 , wherein an average crystal grain size of the target is made to be a fine crystal grain size of 30 μm to 60 μm.