Hafnium silicide target for forming gate oxide film, and method for preparation thereof
View Patent ↗A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi 1.02-2.00 . The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO 2 film. A method of manufacturing the above referenced hafnium silicide target is also provided.
1. A method of manufacturing a hafnium silicide sputtering target for use in forming a gate oxide film, comprising the steps of:
synthesizing a powder of a composition made of HfSi 1.02-2.00 ;
pulverizing the powder to be 100 mesh or less; and
after said synthesizing and pulverizing steps, hot pressing the powder at 1400° C. to 1535° C. to form a sintered hafnium silicide sputtering target that consists of HfSi 1.02-2.00 , that contains a mixed phase including a HfSi phase and a HfSi 2 phase, and that has a relative density of 95% or more.
2. A method according to claim 1 , wherein said hot pressing step is performed at 150 to 2,000 kgf/cm 2 .
3. A method according to claim 2 , wherein said hot pressing step is hot isostatic pressing (HIP).
4. A method according to claim 1 , wherein the HfSi 1.02-2.00 consists of a mixed phase of a HfSi phase and a HfSi 2 phase.
5. A method according to claim 1 , wherein the sintered hafnium silicide sputtering target formed has an oxygen content of 500 to 10,000 ppm.
6. A method according to claim 1 , wherein the sintered hafnium silicide sputtering target formed has a zirconium content of 2.5 wt % or less.
7. A method according to claim 1 , wherein the sintered hafnium silicide sputtering target formed contains impurities including 300 ppm or less of C, 100 ppm or less of Ti, 100 ppm or less of Mo, 10 ppm or less of W, 10 ppm or less of Nb, 10 ppm or less of Fe, 10 ppm or less of Ni, 10 ppm or less of Cr, 0.1 ppm or less of Na, 0.1 ppm or less of K, 0.01 ppm or less of U, and 0.01 ppm or less of Th.
8. A method according to claim 1 , wherein the sintered hafnium silicide sputtering target formed has an average grain size of 5 to 200 μm.
9. A method of manufacturing a hafnium silicide sputtering target for use in forming a HfSiO or HfSiON high dielectric gate insulation film, comprising the steps of:
synthesizing a powder of a composition consisting of HfSi 1.02-2.00 ;
pulverizing the powder to be 100 mesh or less; and
after said synthesizing and pulverizing steps, hot pressing the powder at 1400° C. to 1535° C. to form a sintered hafnium silicide sputtering target that consists of HfSi 1.02-2.00 , that is a mixed phase consisting of a HfSi phase and a HfSi 2 phase, and that has a relative density of 95% or more.
10. A method according to claim 9 , wherein said hot pressing step is performed at 150 to 2,000 kgf/cm 2 .
11. A method according to claim 10 , wherein said hot pressing step is hot isostatic pressing (HIP).
12. A method according to claim 11 , wherein the sintered hafnium silicide sputtering target formed has an oxygen content of 500 to 10,000 ppm.
13. A method according to claim 12 , wherein the sintered hafnium silicide sputtering target formed has a zirconium content of 2.5 wt % or less.
14. A method according to claim 13 , wherein the sintered hafnium silicide sputtering target formed contains impurities including 300 ppm or less of C, 100 ppm or less of Ti, 100 ppm or less of Mo, 10 ppm or less of W, 10 ppm or less of Nb, 10 ppm or less of Fe, 10 ppm or less of Ni, 10 ppm or less of Cr, 0.1 ppm or less of Na, 0.1 ppm or less of K, 0.01 ppm or less of U, and 0.01 ppm or less of Th.
15. A method according to claim 14 , wherein the sintered hafnium silicide sputtering target formed has an average grain size of 5 to 200 μm.