Hafnium silicide target for gate oxide film formation and its production method

1. A hafnium silicide target for forming a gate oxide film composed of HfSi 0.05-0.37 , said target having a texture composed of a compatible phase consisting essentially of a Hf 2 Si phase and a Hf phase, said target having an oxygen content of 500 to 10,000 ppm, and said target being obtained by mixing a hathium hydride powder with a silicon powder in a molar ratio of 1:0.05 to 1:0.37, sintering said hafnium hydride powder and silicon powder mixture at 600 to 800° C. to obtain a hafnium silicide powder formed from a compatible phase principally including a Hf 2 Si phase and a Hf phase, and hot pressing said hafnium silicide powder.

2. A hafnium silicide sputtering target according to claim 1 , wherein said target has a relative density of 95% or more.

3. A hafnium suicide sputtering target according to claim 1 , wherein said target has a zirconium content of 2.5 wt % or less.

4. A hafnium silicide sputtering target according to claim 1 , wherein said target has impurities including 300 ppm or less of C, 100 ppm or less of Ti, 100 ppm or less of Mo, 10 ppm or less of W, 10 ppm or less of Nb, 10 ppm or less of Fe, 10 ppm or less of Ni, 10 ppm or less of Cr, 0.1 ppm or less of Na, 0.1 ppm or less of K, 0.01 ppm or less of U, and 0.01 ppm or less of Th.

5. A hafnium silicide sputtering target according to claim 1 , wherein said target has an average grain size of 5 to 200 μm.

6. A hafnium silicide sputtering target according to claim 2 , wherein said target has a zirconium content of 2.5 wt % or less.

7. A hafnium silicide sputtering target according to claim 6 , wherein said target has impurities including 300 ppm or less of C, 100 ppm or less of Ti, 100 ppm or less of Mo, 10 ppm or less of W, 10 ppm or less of Nb, 10 ppm or less of Fe, 10 ppm or less of Ni, 10 ppm or less of Cr, 0.1 ppm or less of Na, 0.1 ppm or less of k, 0.01 ppm or less of U, and 0.01 ppm or less of Th, and wherein said target has an average grain size of 5 to 200 μm.

8. A hafnium suicide sputtering target according to claim 7 , wherein said target has an average grain size of 5 to 200 μm.

9. A hafnium suicide sputtering target for forming a gate oxide film prepared by a process comprising the steps of:

mixing a hafnium hydride powder with a silicon powder in a molar ratio of 1:0.05 to 1:0.37;

sintering said hafnium hydride powder and silicon powder mixture at 600 to 800° C. to obtain a hafnium silicide powder of a composition HfSi 0.050-0.37 composed of a compatible phase consisting essentially of a Hf 2 Si phase and a Hf phase;

pulverizing said hafnium suicide powder; and

thereafter hot pressing said hafnium silicide powder at 1700° C. to 1830° C. to form a hafnium suicide target having a texture composed of a compatible phase consisting essentially of a Hf 2 Si phase and a Hf phase and having an oxygen content of 500 to 10,000 ppm.

10. A metal suicide sputtering target for forming a gate oxide film, comprising:

a hafnium silicide sputtering target composed of HfSi 0.05-0.37 and having phases consisting essentially of a Hf 2 Si phase and a Hf phase and being without mixed crystals of Hf 5 Si 4 and Hf 3 Si 2 ;

said hafnium silicide sputtering target having an oxygen content of 500 to 10,000 ppm, a zirconium content of 2.5 wt % or less, and an average grain size of 5 to 200 μm; and

said hafnium silicide sputtering target being obtained by mixing a hafnium hydride powder with a silicon powder in a molar ratio of 1:0.05 to 1:0.37, sintering said hafnium hydride powder and silicon powder mixture at 600 to 800° C. to obtain a hafnium silicide powder formed from a Hf 2 Si phase and a Hf phase, and hot pressing said hafnium suicide powder at 1700° C. to 1830° C.