Tantalum sputtering target and method for preparation thereof
View Patent ↗Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including the steps of forging and recrystallization annealing, and thereafter rolling, a tantalum ingot or billet having been subject to melting and casting, and forming a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target. As a result, evenness (uniformity) of the film is enhanced, and quality of the sputter deposition is improved.
1. A sputtering target comprising a tantalum sputtering target having a target thickness, a peripheral edge, and a crystal structure in which the (222) orientation is preferential at a center portion of the target from a position of 30% of the target thickness toward a center face of the target, said crystal structure in which the (222) orientation is preferential does not exist at said peripheral edge.
2. A sputtering target comprising a tantalum sputtering target having a target thickness, a peripheral edge, and a crystal structure in which the (222) orientation is preferential at a center portion of the target from a position of 20% of the target thickness toward a center face of the target, said crystal structure in which the (222) orientation is preferential does not exist at said peripheral edge.
3. A sputtering target comprising a tantalum sputtering target having a target thickness, a peripheral edge, and a crystal structure in which the (222) orientation is preferential at a center portion of the target from a position of 10% of the target thickness toward a center face of the target, said crystal structure in which the (222) orientation is preferential does not exist at said peripheral edge.
4. A sputtering target according to claim 1 , wherein said (222) orientation of said crystal structure is preferential in a disc shape or convex lens shape at said center portion of the target.
5. A sputtering target according to claim 1 , wherein said position is selected from a position immediately beneath an initial erosion portion of the target, a position of an erosion portion of the target when sputtering is performed, and a position in a vicinity thereof.
6. A sputtering target according to claim 1 , wherein said target has an initial erosion portion, wherein said position is immediately beneath said initial erosion portion, and wherein (110), (200) and (211) orientations are the main orientations of the crystal structure of said initial erosion portion of the target.
7. A sputtering target according to claim 1 , wherein said target has a body produced as a result of melting and casting a tantalum raw material.
8. A sputtering target according to claim 2 , wherein said target has an initial erosion portion, wherein said position is immediately beneath said initial erosion portion, and wherein (110), (200) and (211) orientations are the main orientations of the crystal structure of said initial erosion portion of the target.
9. A sputtering target according to claim 3 , wherein said target has an initial erosion portion, wherein said position is immediately beneath said initial erosion portion, and wherein (110), (200) and (211) orientations are the main orientations of the crystal structure of said initial erosion portion of the target.