Nickel alloy sputtering target and nickel alloy thin film
View Patent ↗The present invention relates to a nickel alloy sputtering target comprising 1 to 30 at % of Cu; 2 to 25 at % of at least one element selected from among V, Cr, Al, Si, Ti and Mo; remnant Ni and unavoidable impurities so as to inhibit the Sn diffusion between a solder bump and a substrate layer or a pad. Provided are a nickel alloy sputtering target and a nickel alloy thin film for forming a barrier layer having excellent wettability with the Pb-free Sn solder or Sn—Pb solder bump, and capable of inhibiting the diffusion of Sn being a soldering component and effectively preventing the reaction with the substrate layer upon forming a Pb-free Sn solder or Sn—Pb solder bump on a substrate such as a semiconductor wafer or electronic circuit or a substrate layer or pad of the wiring or electrode formed thereon.
1. A nickel alloy sputtering target for forming a film for preventing tin (Sn) diffusion, comprising a sputtering target body of a predetermined diameter and a predetermined thickness adapted to form a thin film via magnetron sputtering, said sputtering target body being made of a composition of 1 to 30 atomic percent of copper (Cu); 2 to 25 atomic percent of at least one element selected from a group consisting of vanadium (V), chromium (Cr), aluminum (Al), silicon (Si), and molybdenum (Mo); and remnant nickel (Ni).
2. The nickel alloy sputtering target according to claim 1 , wherein the copper in said sputtering target body exists in a solid solution, and wherein the nickel alloy is formed by adding said at least one element to a Ni—Cu solid solution.
3. A nickel alloy thin film formed between a solder bump and a substrate layer or a pad, said nickel alloy thin film comprising 1 to 30 atomic percent of copper (Cu); 2 to 25 atomic percent of at least one element selected from a group consisting of vanadium (V), chromium (Cr), aluminum (Al), silicon (Si), titanium (Ti) and molybdenum (Mo); and remnant nickel (Ni).
4. The nickel alloy thin film formed between a solder bump and a substrate layer or a pad according to claim 3 , wherein the copper exists in a solid solution in said thin film, and wherein the nickel alloy is formed by adding said at least one element to a Ni—Cu solid solution.
5. A nickel alloy thin film according to claim 3 , wherein the solder bump is a Pb-free Sn solder or a Sn solder.
6. A nickel alloy thin film according to claim 5 , further comprising an intermetallic compound layer between the solder bump and the substrate layer or pad, said intermetallic compound layer consisting of Cu and Sn.
7. A nickel alloy thin film according to claim 6 , wherein said Cu—Sn intermetallic compound layer is of a thickness of 0.01 to 5 μm.
8. A nickel alloy thin film according to claim 3 , further comprising an intermetallic compound layer between the solder bump and the substrate layer or pad, said intermetallic compound layer consisting of Cu and Sn.
9. A nickel alloy thin film according to claim 8 , wherein said Cu—Sn intermetallic compound layer is of a thickness of 0.01 to 5 μm.
10. The nickel alloy sputtering target according to claim 1 , wherein said composition of said sputtering target body includes titanium (Ti), wherein a total amount of Ti together with said at least one element is 2 to 25 atomic percent.
11. A nickel alloy sputtering target, consisting of:
a sputtering target body of a predetermined diameter and a predetermined thickness adapted to form a thin film via magnetron sputtering;
said sputtering target body being made of a composition consisting of 1 to 30 atomic percent of copper (Cu); 2 to 25 atomic percent of an additional element selected from a group consisting of vanadium (V), chromium (Cr), aluminum (Al), silicon (Si), and molybdenum (Mo); and remnant nickel (Ni);
the copper in said sputtering target body existing in a solid solution; and
said sputtering target body having a single phase metallographic structure and an average grain size of 100 μm or less.
12. A nickel alloy sputtering target according to claim 11 , wherein said additional element is chromium (Cr), aluminum (Al), silicon (Si), or molybdenum (Mo).
13. A nickel alloy sputtering target according to claim 11 , wherein said additional element is aluminum (Al), silicon (Si), or molybdenum (Mo).
14. A nickel alloy sputtering target according to claim 13 , wherein said predetermined thickness of said sputtering target body is 10 mm.
15. A nickel alloy sputtering target according to claim 1 , wherein said at least one element is chromium (Cr), aluminum (Al), silicon (Si), or molybdenum (Mo).
16. A nickel alloy sputtering target according to claim 1 , wherein said at least one element is aluminum (Al), silicon (Si), or molybdenum (Mo).
17. A nickel alloy sputtering target according to claim 1 , wherein said predetermined thickness of said sputtering target body is 10 mm.
18. A nickel alloy sputtering target according to claim 1 , wherein said predetermined diameter of said sputtering target body is 80 mm.
19. A nickel alloy thin film according to claim 3 , wherein said at least one element is chromium (Cr), aluminum (Al), silicon (Si), or molybdenum (Mo).
20. A nickel alloy thin film according to claim 3 , wherein said at least one element is aluminum (Al), silicon (Si), or molybdenum (Mo).