Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them
View Patent ↗A SrRuO 3 conductive oxide sintered body characterized in that the relative density is 93% or more. By improving the additive amount and sintering conditions of Bi 2 O 3 , the present invention seeks to improve the relative density of a SrRuO 3 conductive oxide sintered body, and to provide a conductive oxide sintered body capable of suppressing the generation of particles during sputtering upon forming a thin film and improving the quality and production yield; a sputtering target formed from such sintered body; and the manufacturing method thereof.
1. A sintered body, comprising a SrRuO 3 conductive oxide sintered body containing an amount greater than 0.5 mol % and no greater than 1.2 mol % of Bi 2 O 3 and having a relative density of 93% or more.
2. A conductive oxide sintered body according to claim 1 , wherein the sintered body has a resistivity of 500 μΩcm or less.
3. A conductive oxide sintered body according to claim 1 , wherein the sintered body has a resistivity of 300 μΩcm or less.
4. A sputtering target, comprising a SrRuO 3 conductive oxide sintered body containing an amount greater than 0.5 mol % and no greater than 1.2 mol % of Bi 2 O 3 and having a relative density of 93% or more.
5. A sputtering target according to claim 4 , wherein the sputtering target has a resistivity of 500 μΩcm or less.
6. A sputtering target according to claim 4 , wherein the sputtering target has a resistivity of 300 μΩcm or less.
7. A manufacturing method of a SrRuO 3 conductive oxide sintered body or a sputtering target formed from said sintered body, comprising the step of adding an amount greater than 0.5 mol % and no greater than 1.2 mol % of Bi 2 O 3 as a sintering auxiliary upon manufacturing the SrRuO 3 conductive oxide sintered body.
8. A method according to claim 7 , further comprising the step of sintering at a temperature of 1400 to 1700° C. upon manufacturing the SrRuO 3 conductive oxide sintered body.
9. A method according to claim 8 , wherein said temperature during said sintering is 1600 to 1700° C.
10. A method according to claim 8 , further comprising the step of CIP (cold isostatic pressing) molding before said sintering step upon manufacturing the SrRuO 3 conductive oxide sintered body.
11. A method according to claim 10 , wherein said CIP molding is at a pressure of 1500 kg/cm 2 .
12. A method according to claim 8 , wherein said sintered body is set inside a vented alumina container during said sintering step.