Tantalum sputtering target and method for preparation thereof
View Patent ↗Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including the steps of forging and recrystallization annealing, and thereafter rolling, a tantalum ingot or billet having been subject to melting and casting, and forming a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target. As a result, evenness (uniformity) of the film is enhanced, and quality of the sputter deposition is improved.
1. A sputtering target comprising a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential in a disc shape or convex lens shape at a center portion of the target and not preferential in a remainder peripheral portion of the target.
2. A sputtering target according to claim 1 , wherein said (222) orientation of said crystal structure is preferential at a position selected from a position immediately beneath an initial erosion portion of the target, a position of an erosion portion of the target when sputtering is performed, and a position in a vicinity thereof.
3. A sputtering target according to claim 1 , wherein said target has a body produced as a result of melting and casting a tantalum raw material.