Pentathienyl-fluorene copolymer
The present invention relates to a pentathienyl-fluorene copolymer having structural units represented by formula (I): here R and R′ are each independently a substituent or H. The invention also relates to a transistor containing this copolymer. The present invention addresses a problem in the art by providing an electroactive device with exceptionally low hysteresis.
1. A pentathienyl-fluorene copolymer having structural units represented by following formula:
where R and R′ are each independently a substituent or H.
2. The pentathienyl-fluorene copolymer of claim 1 wherein each R is independently H, C 1 -C 20 linear or branched alkyl, C 5 -C 30 aryl, or C 6 -C 40 aralkyl, and optionally one or more heteroatoms selected from the group consisting of O, S, N, P, and Si; and each R′ is independently H, C 1 -C 30 linear or branched alkyl, or C 1 -C 30 alkoxyalkyl.
3. The pentathienyl-fluorene copolymer of claim 2 wherein each R is n-hexyl, n-octyl, or n-hexyloxylphenyl and each R′ is independently H or or C 1 -C 12 linear or branched alkyl.
4. The pentathienyl-fluorene copolymer of claim 1 which contains pentathienyl structural units represented by the following formula:
where each R′ is independently H or C 1 -C 12 linear or branched alkyl.
5. The pentathienyl-fluorene copolymer of claim 4 wherein at least one R′ is C 1 -C 12 linear or branched alkyl.
6. The pentathienyl-fluorene copolymer of claim 4 wherein R′ is n-hexyl or n-octyl.
7. A transistor comprising a semiconducting transistor channel constructed of a pentathienyl-fluorene copolymer having structural units represented by following formula:
where R and R′ are each independently a substituent or H.
8. The transistor of claim 7 wherein R is n-hexyl, n-octyl, or n-hexyloxylphenyl and each R′ is independently H or or C 1 -C 12 linear or branched alkyl.
9. The transistor of claim 8 wherein the pentathienyl-fluorene copolymer o pentathienyl structural units represented by the following formula:
where each R′ is independently H or C 1 -C 12 linear or branched alkyl.
10. The transistor of claim 9 wherein R′ is n-hexyl or n-octyl.