High purity hafnium, target and thin film comprising said high purity hafnium, and method for producing high purity hafnium
The present invention relates to high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and an oxygen content of 40 wtppm or less, and a target and thin film formed from such high purity hafnium, and high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and in which the content of sulfur and phosphorus is respectively 10 wtppm or less. The present invention also relates to a high purity hafnium material which uses a hafnium sponge with reduced zirconium as the raw material, and in which the content of oxygen, sulfur and phosphorus containing in the hafnium is reduced, as well as to a target and thin film formed from such material, and to the manufacturing method of high purity hafnium. Thereby provided is efficient and stable manufacturing technology which enables the manufacture of a high purity hafnium material, and a target and thin film formed from such material.
1 . High purity hafnium and a target and thin film formed from said high purity hafnium having a purity of 4N or higher excluding zirconium and gas components, and an oxygen content of 40 wtppm or less.
2 . High purity hafnium and a target and thin film formed from said high purity hafnium having a purity of 4N or higher excluding zirconium and gas components, and in which the content of sulfur and phosphorus is respectively 10 wtppm or less.
3 . High purity hafnium and a target and thin film formed from said high purity hafnium according to claim 1 having a purity of 4N or higher excluding zirconium and gas components, and in which the content of sulfur and phosphorus is respectively 10 wtppm or less.
4 . (canceled)
5 . A manufacturing method of high purity hafnium wherein a hafnium sponge raw material is subject to solvent extraction and thereafter dissolved, and the obtained hafnium ingot is further subject to deoxidation with molten salt.
6 . A manufacturing method of high purity hafnium according to claim 5 wherein, after performing deoxidation with molten salt, electron beam melting is further performed.