Patent Assignment
Reel/Frame 025123/0358
Change of Name
Recorded: 2010-10-12
Pages: 8
Assignor
NIPPON MINING HOLDINGS, INC.
Executed: 2010-07-01
Assignee
JX NIPPON MINING & METALS CORPORATION
6-3, OTEMACHI 2-CHOME, CHIYODA-KU, TOKYO, 100-8164, JAPAN
Covered Properties
(52)
High Purity Copper Sulfate and Method for Production Thereof
Highly Pure Hafnium Material, Target Thin Film Comprising the Same and Method for Producing Highly Pure Hafnium
Sputtering target and method for production thereof
Target for sputtering
Application:
10/566,300 →
Publication:
US 2007/0111894
Sputtering Target and Method for Finishing Surface of Such Target
High-purity ni-v alloy target therefrom high-purity ni-v alloy thin film and process for producing high-purity ni-v alloy
Tantalum Sputtering Target
High purity hafnium, target and thin film comprising said high purity hafnium, and method for producing high purity hafnium
Application:
10/595,660 →
Publication:
US 2006/0266158
Copper or copper alloy target/copper alloy backing plate assembly
Ni-pt alloy and target comprising the alloy
Application:
10/596,671 →
Publication:
US 2007/0098590
Ultrahigh-Purity Copper and Process for Producing the Same
Sputtering Target with Few Surface Defects, and Surface Processing Method Thereof
Co-Cr-Pt-B Alloy Sputtering Target
Barrier Film For Flexible Copper Substrate And Sputtering Target For Forming Barrier Film
Application:
11/573,167 →
Publication:
US 2007/0209547
High Purity Zrb2 Powder and Manufacturing Method Thereof
Sputtering Target, Sputtering Target-Backing Plate Assembly and Deposition System
Sputtering Target for Producing Metallic Glass Membrane and Manufacturing Method Thereof
Sb-Te Alloy Sintered Compact Target and Manufacturing Method Thereof
Sb-Te Alloy Powder for Sintering, Sintered Compact Sputtering Target Obtained by Sintering Said Powder, and Manufacturing Method of Sb-Te Alloy Powder for Sintering
Process for Production of Ge-Cr Alloy Sputtering Target
Application:
11/841,165 →
Publication:
US 2007/0297932
Pot-Shaped Copper Sputtering Target and Manufacturing Method Thereof
Sputtering Target
Ultrahigh-Purity Copper and Process for Producing the Same, and Bonding Wire Comprising Ultrahigh-Purity Copper
Application:
11/915,628 →
Publication:
US 2009/0272466
Chromic Oxide Powder for Sputtering Target, and Sputtering Target Manufactured from such Chromic Oxide Powder
Ruthenium-Alloy Sputtering Target
High-Purity Tin or Tin Alloy and Process for Producing High-Purity Tin
Application:
11/916,906 →
Publication:
US 2009/0098012
Copper Foil for Printed Wiring Board
Application:
11/917,674 →
Publication:
US 2009/0208762
High-Purity Hafnium, Target and Thin Film Comprising High-Purity Hafnium, and Process for Producing High-Purity Hafnium
Sputtering Target
High-Purity Ru Alloy Target, Process for Producing the Same, and Sputtered Film
Erbium Sputtering Target and Manufacturing Method
Application:
12/137,856 →
Publication:
US 2009/0090621
Lithium Nickel Manganese Cobalt Composite Oxide and Lithium Rechargeable Battery
Nonmagnetic Material Particle Dispersed Ferromagnetic Material Sputtering Target
Zirconium Crucible
Manufacturing Method of High Purity Nickel, High Purity Nickel, Sputtering Target formed from said High Purity Nickel, and Thin Film formed with said Sputtering Target
Application:
12/202,847 →
Publication:
US 2009/0004498
Hafnium Alloy Target and Process for Producing the Same
Hafnium Alloy Target
Hafnium Alloy Target
Nickel Crucible for Melting Analytical Sample, Method of Preparing Analytical Sample and Method of Analysis
Sintered Sputtering Target Made of Refractory Metals
Method for Determining Machining Plane of Planar Material, Machining Method and Device for Determining Machining Plane and Flat Surface Machining Device
Lithium-Containing Transition Metal Oxide Target, Process for Producing the Same and Lithium Ion Thin Film Secondary Battery
Copper Alloy Sputtering Target and Semiconductor Element Wiring
Copper Alloy Sputtering Target and Semiconductor Element Wiring
Application:
12/367,581 →
Publication:
US 2009/0140430
Barrier Film for Flexible Copper Substrate and Sputtering Target for Forming Barrier Film
Ultrahigh-Purity Copper and Process for Producing the Same
Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same
Iron Silicide Powder and Method for Production Thereof
Copper Alloy Sputtering Target, Process for Producing the Same and Semiconductor Element Wiring
Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same
High-Purity Ni-V Alloy, Target Therefrom, High-Purity Ni-V Alloy Thin Film and Process for Producing High-Purity Ni-V Alloy
Sputtering Target for Producing Metallic Glass Membrane and Manufacturing Method Thereof
Related Assignments
(7)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
May 4, 2006
From: SHINDO, YUCHIRO
To: NIKKO MATERIALS CO., LTD.
Reel/Frame 017851/0062 →
Assignment of Part Interest
Aug 16, 2007
From: NIPPON MINING & METALS CO., LTD.
To: TOHOKU UNIVERSITY
Reel/Frame 019705/0723 →
Merger
Oct 8, 2010
From: NIPPON MINING & METALS CO., LTD.
To: NIPPON MINING HOLDINGS, INC.
Reel/Frame 025115/0062 →
Change of Address
Feb 7, 2017
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 041649/0733 →
Change of Address
Mar 29, 2017
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 042109/0069 →
Change of Address
Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
Change of Address
Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057453/0937 →