Ruthenium-alloy sputtering target
View Patent ↗Provided is a ruthenium alloy sputtering target as a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder capable of creating oxides easier than ruthenium, wherein purity of the target excluding gas components is 99.95 wt % or higher, said target contains 5 at % to 60 at % of metal capable of creating oxides easier than ruthenium, relative density is 99% or higher, and oxygen content as impurities is 1000 ppm or less. This ruthenium alloy sputtering target is capable of reducing its oxygen content, reducing the generation of arcing and particles during sputtering, increasing the target strength by improving the sintered density, and improving the deposition quality by strictly restricting the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to the Si semiconductor.
1. A ruthenium alloy sputtering target comprising a sintered compact obtained by sintering a mixed powder consisting of a powder of ruthenium and a powder of a metal capable of forming oxides thereof more easily than ruthenium, wherein said metal is tantalum, niobium, titanium, hafnium or zirconium, wherein said target has a purity excluding gas components of 99.95 wt % or higher, wherein said target contains said metal in an amount of 5 at % to 60 at %, has a relative density of 99% or higher, and has an oxygen content as an impurity of 1000 ppm or less, and wherein said target has a structure in which ruthenium and said metal are not completely alloyed, the structure having an average crystal grain size of 5 to 50 μm.
2. The ruthenium alloy sputtering target according to claim 1 , wherein the oxygen content is 100 to 500 wtppm.
3. The ruthenium alloy sputtering target according to claim 2 , wherein said metal is tantalum.
4. The ruthenium alloy sputtering target according to claim 2 , wherein said metal is niobium, titanium, hafnium or zirconium.
5. The ruthenium alloy sputtering target according to claim 4 , wherein said target contains B and P as impurities each in an amount of less than 1 wtppm.
6. The ruthenium alloy sputtering target according to claim 4 , wherein the structure has no oxygen enrichment revealed on the basis of XRD and EPMA at any part of an interface of ruthenium and said metal.
7. The ruthenium alloy sputtering target according to claim 3 , wherein said target contains B and P as impurities each in an amount of less than 1 wtppm.
8. The ruthenium alloy sputtering target according to claim 2 , wherein said target contains B and P as impurities each in an amount of less than 1 wtppm.
9. The ruthenium alloy sputtering target according to claim 2 , wherein said target has a structure that has no oxygen enrichment revealed on the basis of XRD and EPMA at any part of an interface of ruthenium and said metal.
10. The ruthenium alloy sputtering target according to claim 1 , wherein said target contains B and P as impurities each in an amount of less than 1 wtppm.
11. The ruthenium alloy sputtering target according to claim 1 , wherein said target has a structure that has no oxygen enrichment revealed on the basis of XRD and EPMA at any part of an interface of ruthenium and said metal.
12. A ruthenium alloy sputtering target according to claim 10 , wherein the target consists of ruthenium, 20 at % to 60 at % of the metal selected from the group consisting of tantalum, niobium, titanium, hafnium and zirconium, and impurities.
13. The ruthenium alloy sputtering target according to claim 1 , wherein said sintered compact contains 10 to 60 at % of said metal.
14. The ruthenium alloy sputtering target according to claim 1 , wherein said sintered compact contains 20 to 60 at % of said metal.