Sputtering target, thin film for optical information recording medium and process for producing the same
View Patent ↗A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A X B Y O (KaX+KbY)/2 (ZnO) m , 1<m, X≦m, 0<Y≦0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO 2 , and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.
1. A method of manufacturing a thin film for an optical information recording medium comprising the step of forming a thin film via direct current sputtering of a sputtering target that has a relative density of 90% or more and that contains a homologous compound having as its principal component zinc oxide satisfying A X ByO (KaX+KbY)/2 (ZnO) m , where 1<m, X≦m, 0<Y≦0.9, and X+Y=2, and where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb, and wherein a range of variation of positive elements other than zinc in the target is within 0.5% and a range of variation of density in the target is within 3%.
2. A method according to claim 1 , wherein m is equal to or greater than 4.
3. A method according to claim 2 , where m is an integral number.
4. A method according to claim 2 , wherein the film is located adjacent a recording layer of the optical information recording medium and forms a protective high-medium point dielectric thin film that is amorphous and stably retains an amorphous nature when heated to 600° C. on the recording layer of the optical information recording medium.
5. A method according to claim 1 , where m is an integral number.
6. A method according to claim 1 , wherein the film is located adjacent a reflective layer or a recording layer of the optical information recording medium.
7. A method according to claim 1 , wherein A and B are respectively different positive elements of trivalence.
8. A method according to claim 7 , wherein A is indium (In) and B is selected from the group consisting of In, Al, Ga, In, Sc, Y, La and Fe.
9. A method of manufacturing a re-writable phase change optical information recording medium comprising the steps of:
providing a sputtering target that has a relative density of 90% or more and that consists of a homologous compound having as its principal component zinc oxide satisfying A X B Y O 3 (ZnO) m , where m≧4, 0<Y≦0.9, and X+Y=2, where A and B are respectively different positive elements of trivalence, and where a range of variation of the positive elements A and B in the target is within 0.5% and a range of variation of density in the target is within 3%; and
performing direct current (DC) sputtering of the sputtering target to form a protective high-melting point dielectric thin film that is amorphous and stably retains an amorphous nature when heated to 600° C. on a recording layer of the re-writable phase change optical information recording medium.
10. A method according to claim 9 , wherein A is Indium (In).
11. A method according to claim 10 , wherein B is selected from the group consisting of Al, Ga, In, Sc, Y, La and Fe.
12. A method according to claim 11 , wherein said direct current (DC) sputtering forms the protective high-melting point dielectric thin film such that the thin film has optical characteristics including a transmittance of 90% to 99% at a wavelength of 650 nm and a refractive index of 1.9 to 2.3 at a wavelength of 633 nm.