IP Library Granted Patent US 8,062,440
Granted Patent B2
US 8,062,440 · App. 12/204,069 · Granted Nov 22, 2011

Hafnium alloy target and process for producing the same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,062,440
App. No.
12/204,069
Granted
Nov 22, 2011
Kind
B2
Abstract

A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.

Claims (5)

1. A method of manufacturing a hafnium alloy target, comprising the steps of hot forging and rolling an ingot or billet of hafnium alloy and thereafter heating said ingot or billet to 800-1300° C. for at least 15 minutes in an atmosphere, a vacuum, or an inert gas atmosphere, said rolling step is hot rolling or cold rolling, and said target is produced such that said target contains at least one of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf and has a habit plane ratio of a plane {002} and of three planes {103}, {014} and {015} lying within 35° from {002} of at least 55%, a variation in a total sum of intensity ratios of these four planes depending on locations of 20% or less, an average crystal grain size of 1-100 μm, impurities of Fe, Cr and Ni of 1 wtppm or less, respectively, and an average roughness Ra of an erosion face of said target of 0.01-2 μm.

2. A method according to claim 1 , further comprising the step of diffusion bonding the hafnium alloy target to a backing plate.

3. A method according to claim 2 , wherein the backing plate is made of the material selected from the group consisting of Al, an Al alloy, Cu, the Cu alloy, Ti and the Ti alloy.

4. A method according to claim 3 , further comprising the step of bead blasting, etching or metal spraying a non-erosion face of the target to provide the non-erosion face with an average roughness Ra of 2-50 μm.

5. A method according to claim 1 , further comprising the step of bead blasting, etching or metal spraying a non-erosion face of the target to provide the non-erosion face with an average roughness Ra of 2-50 μm.

Assignments (6)
CHANGE OF ADDRESS Recorded Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
CHANGE OF ADDRESS Recorded Feb 7, 2017
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 041649/0733 →
CHANGE OF NAME Recorded Oct 12, 2010
From: NIPPON MINING HOLDINGS, INC.
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 025123/0358 →
MERGER Recorded Oct 8, 2010
From: NIPPON MINING & METALS CO., LTD.
To: NIPPON MINING HOLDINGS, INC.
Reel/Frame 025115/0062 →
CHANGE OF NAME Recorded Sep 8, 2008
From: NIKKO MATERIALS CO., LTD.
To: NIPPON MINING & METALS CO., LTD
Reel/Frame 021503/0680 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 5, 2008
From: OKABE, TAKEO; IRUMATA, SHUICHI; YAMAKOSHI, YASUHIRO; MIYASHITA, HIROHITO; SUZUKI, RYO
To: NIKKO MATERIALS CO., LTD.
Reel/Frame 021492/0255 →