Copper or copper alloy target/copper alloy backing plate assembly
View Patent ↗Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu—Ni—Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.
1. A target and backing plate assembly for use in magnetron sputtering, comprising a copper or copper alloy target having a back face and a copper alloy backing plate diffusion bonded directly to said back face, the copper alloy backing plate being made of a Cu based alloy selected from the group consisting of:
a Cu—Be-based alloy consisting of Cu, Be, Ni, and Co, wherein the Cu—Be based alloy has a content of Be of 0.2 to 0.5 wt %,
or a Cu—Ni—Si-based alloy consisting of Cu, Ni, Si, and one additional element, wherein the one additional element is selected from the group consisting of Cr or Mg, and wherein the Cu—Ni—Si based alloy has a content of Ni of 2 to 4 wt % and a content of Si of 0.3 to 0.9 wt%.
2. The assembly according to claim 1 , wherein the Cu—Ni—Si-based alloy contains Cr or Mg in a content of 0.1 to 0.9 wt %.
3. The assembly according to claim 2 , wherein the Cu-based alloy backing plate has an electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.
4. The assembly according to claim 2 , wherein the diffusion bonded assembly is bonded at a diffusion bonding temperature of 175 to 450° C.
5. The assembly according to claim 1 , wherein the Cu-based alloy backing plate has an electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.
6. The assembly according to claim 5 , wherein the diffusion bonded assembly is bonded at a diffusion bonding temperature of 175 to 450° C.
7. The assembly according to claim 1 , wherein the diffusion bonded assembly is bonded at a diffusion bonding temperature of 175 to 450° C.
8. The assembly according to claim 1 , wherein the Cu—Be-based alloy consists of 97.6wt % Cu, 0.3wt % Be and 2.1wt % in total of Ni and Co.
9. The assembly according to claim 8 , wherein the Cu-based alloy backing plate has an electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.
10. The assembly according to claim 8 , wherein the diffusion bonded assembly is bonded at a diffusion bonding temperature of 175 to 450° C.