Tantalum sputtering target
View Patent ↗A tantalum sputtering target, wherein when the sum of the overall crystalline orientation is 1 on a tantalum target surface, the area ratio of crystals having any orientation among (100), (111), (110) does not exceed 0.5. Thus, obtained is a tantalum sputtering target having superior deposition properties where the deposition speed is high, film evenness (uniformity) is superior, and generation of arcings or particles is reduced.
1. A sputtering target, comprising a tantalum sputtering target having a recrystallized grain structure formed by forging, rolling and heat treatment processing of a cast ingot such that said recrystallized grain structure has fine and uniform crystal grains, and said target having a random crystal orientation, wherein, when a sum of an overall crystalline orientation of a surface of said tantalum sputtering target is made to be 1, an area ratio of crystals having any orientation among (100), (111) and (110) does not exceed 0.5, and the area ratio of crystals having the orientation of (100) is 0.3 to 0.5.
2. The tantalum sputtering target according to claim 1 , wherein when the sum of the overall crystalline orientation of said surface of said tantalum sputtering target is 1, a sum of the area ratio of crystals having any two orientations among (100), (111) and (110) does not exceed 0.75.
3. A tantalum sputtering target according to claim 2 , wherein said surface is a sputtered erosion face of said tantalum sputtering target.
4. A tantalum sputtering target according to claim 3 , wherein an average crystal grain size of said tantalum sputtering target is 80 μm or less.
5. A tantalum sputtering target according to claim 1 , wherein said surface is a sputtered erosion face of said tantalum sputtering target.
6. A tantalum sputtering target according to claim 1 , wherein an average crystal grain size of said tantalum sputtering target is 80 μm or less.
7. A tantalum sputtering target according to claim 1 , wherein a purity of said tantalum sputtering target is 99.99% or more.
8. A tantalum sputtering target according to claim 1 , wherein the area ratio of crystals having the orientation of (100) is 0.4 to 0.5.
9. A sputtering target, comprising a tantalum sputtering target having a recrystallized grain structure formed by forging, rolling and heat treatment processing of a cast ingot such that said recrystallized grain structure has fine and uniform crystal grains, and said target having a random crystal orientation, wherein, when a sum of an overall crystalline orientation of a surface of said tantalum sputtering target is made to be 1, a sum of an area ratio of crystals having any two orientations among (100), (111) and (110) does not exceed 0.75, and an area ratio of crystals having an orientation of (100) is 0.3 to 0.5.
10. A tantalum sputtering target according to claim 9 , wherein the area ratio of crystals having the orientation of (100) is 0.4 to 0.5.
11. A sputtering target, comprising a tantalum sputtering target having a recrystallized grain structure formed by forging, rolling and heat treatment processing of a cast ingot such that said recrystallized grain structure has fine and uniform crystal grains, and said target having a random crystal orientation, wherein, when a sum of an overall crystalline orientation of a surface of said tantalum sputtering target is made to be 1, an area ratio of crystals having any orientation among (100)<001>, (111)<001> and (110)<001> of which is angular errors from an ND direction are within 10° does not exceed 0.5, and the area ratio of crystals having the orientation of (100)<001> of which angular errors from the ND direction are within 10° is 0.3 to 0.5.
12. A tantalum sputtering target according to claim 11 , wherein, when the sum of the overall crystalline orientation is 1 on said surface, the sum of the area ratio of crystals having any two orientations among (100)<001>, (111)<001> and (110)<001> of which angular errors from the ND direction are within 10° does not exceed 0.75.
13. A tantalum sputtering target according to claim 11 , wherein said surface is a sputtered erosion face of said tantalum sputtering target.
14. A tantalum sputtering target according to claim 11 , wherein an area ratio of crystals having the orientation of (111)<001> of which angular errors from the ND direction are within 10° is 0.2 to 0.3.
15. A sputtering target, comprising a tantalum sputtering target having a recrystallized grain structure formed by forging, rolling and heat treatment processing of a cast ingot such that said recrystallized grain structure has fine and uniform crystal grains, and said target having a random crystal orientation, wherein, when a sum of an overall crystalline orientation of a surface of said tantalum sputtering target is made to be 1, a sum of the area ratio of crystals having any two orientations among (100)<001>, (111)<001> and (110)<001> of which angular errors from an ND direction are within 10° does not exceed 0.75, and an area ratio of crystals having an orientation of (100)<001> of which angular errors from the ND direction are within 10° is 0.3 to 0.5.
16. A tantalum sputtering target according to claim 15 , wherein an area ratio of crystals having the orientation of (111)<001> of which angular errors from the ND direction are within 10° is 0.2 to 0.3.