IP Library Granted Patent US 8,663,439
Granted Patent B2
US 8,663,439 · App. 11/719,229 · Granted Mar 4, 2014

Sputtering target for producing metallic glass membrane and manufacturing method thereof

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,663,439
App. No.
11/719,229
Granted
Mar 4, 2014
Kind
B2
Abstract

A sputtering target for producing a metallic glass membrane characterized in comprising a structure obtained by sintering atomized powder having a composition of a ternary compound system or greater with at least one or more metal elements selected from Pd, Zr, Fe, Co, Cu and Ni as its main component (component of greatest atomic %), and being an average grain size of 50 μm or less. The prepared metallic glass membrane can be used as a substitute for conventional high-cost bulk metallic glass obtained by quenching of molten metal. This sputtering target for producing the metallic glass membrane is also free from problems such as defects in the metallic glass membrane and unevenness of composition, has a uniform structure, can be produced efficiently and at low cost, and does not generate many nodules or particles. Further provided is a method for manufacturing such a sputtering target for forming the metallic glass membrane.

Claims (2)

1. A sputtering target, comprising a sintered body sputtering target having an ultrafine nano-size uniform structure of a glass state, said sputtering target being made of an alloy composition selected from the group consisting of Ni 35 Nb 35 Zr 30 and Ni 35 Ta 35 Zr 30 , and said sputtering target having an average crystallite size determined by XRD (X-ray diffraction) peak profile by using Scherrer's equation of 10 Å to 200 Å.

2. A sputtering target according to claim 1 , wherein a grain having an element segregation of 1 μm or larger does not exist within said sputtering target.

Assignments (6)
CHANGE OF ADDRESS Recorded Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
CHANGE OF ADDRESS Recorded Feb 7, 2017
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 041649/0733 →
CHANGE OF NAME Recorded Oct 12, 2010
From: NIPPON MINING HOLDINGS, INC.
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 025123/0358 →
MERGER Recorded Oct 8, 2010
From: NIPPON MINING & METALS CO., LTD.
To: NIPPON MINING HOLDINGS, INC.
Reel/Frame 025115/0062 →
ASSIGNMENT OF PART INTEREST Recorded Aug 16, 2007
From: NIPPON MINING & METALS CO., LTD.
To: TOHOKU UNIVERSITY
Reel/Frame 019705/0723 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2007
From: NAKAMURA, ATSUSHI; YAHAGI, MASATAKA; INOUE, AKIHISA; KIMURA, HISAMICHI; YAMAURA, SHIN-ICHI
To: NIPPON MINING & METALS CO., LTD.
Reel/Frame 019305/0303 →