High-purity hafnium, target and thin film comprising high-purity hafnium, and process for producing high-purity hafnium
View Patent ↗Provided is a method of manufacturing high-purity hafnium by using a hafnium sponge with reduced zirconium as the raw material in which the impurity content of Fe, Cr, and Ni, the impurity content of Ca, Na, and K, the impurity content of Al, Co, Cu, Ti, W, and Zn, the alpha dose, the impurity content of U and Th, the impurity content of Pb and Bi, and the content of C as a gas component contained in the hafnium are reduced. Based on this efficient and stable manufacturing technology, additionally provided are a high-purity hafnium material obtained from the foregoing high-purity hafnium, as well as a sputtering target, a gate insulation film and a metal gate thin film, which are formed from this material. This high-purity hafnium has a purity 6N or higher except Zr and gas components, wherein Fe, Cr and Ni are respectively 0.2 ppm or less, Ca, Na and K are respectively 0.1 ppm or less, and Al, Co, Cu, Ti, W and Zn are respectively 0.1 ppm or less.
1. High-purity hafnium having a purity of 6N or higher excluding Zr and gas components and total impurities excluding Zr and gas components of 1 ppm or less, wherein Fe content is 0.01 to 0.05 ppm, Cr and Ni are respectively 0.2 ppm or less, Ca, Na and K are respectively 0.1 ppm or less, Al, Co, Cu, Ti, W and Zn are respectively 0.1 ppm or less, U and Th are respectively less than 1 ppb, and Pb and Bi are respectively less than 0.1 ppm.
2. The high-purity hafnium according to claim 1 , wherein the alpha dose is 0.01 cph/cm 2 or less.
3. The high-purity hafnium according to claim 2 , wherein the content of C as a gas component is 50 ppm or less.
4. A sputtering target formed from the high-purity hafnium according to claim 1 .
5. A gate insulation film or a metal gate thin film formed from the high-purity hafnium according to claim 1 .
6. A manufacturing method of high-purity hafnium having a purity of 6N or higher excluding Zr and gas components awl total impurities excluding Zr and gas components of 1 ppm or less, and Fe content of 0.01 to 0.05 ppm, including the steps of distilling and refining coarse HfCl 4 , reducing the refined HfCl 4 to obtain a hafnium sponge, performing molten salt electrolysis with the hafnium sponge as the anode, and subjecting an electrodeposit obtained through electrolysis to electron beam melting.
7. A high-purity hafnium according to claim 1 , wherein the content of C as a gas component is 50 ppm or less.
8. A sputtering target, gate insulation film, or metal gate thin film formed from high-purity hafnium having a purity of 6N or higher excluding Zr and gas components and total impurities excluding Zr and gas components of 1 ppm or less, wherein Fe content is 0.01 to 0.05 ppm, Cr and Ni are respectively 0.2 ppm or less, Ca, Na and K are respectively 0.1 ppm or less, Al, Co, Cu, Ti, W and Zn are respectively 0.1 ppm or less, U and Th are respectively less than 1 ppb, and Pb and Bi are respectively less than 0.1 ppm.
9. A sputtering target, gate insulation film, or metal gate thin film according to claim 8 , wherein the content of C as a gas component is 50 ppm or less.
10. A sputtering target, gate insulation film, or metal gate thin film according to claim 8 , wherein alpha dose is 0.01 cph/cm 2 or less.
11. A sputtering target, gate insulation film, or metal gate thin film according to claim 10 , wherein the content of C as a gas component is 50 ppm or less.
12. A sputtering target, gate insulation film, or metal gate thin film according to claim 11 , wherein Ni content is 0.04 to 0.18 ppm.
13. A sputtering target, gate insulation film, or metal gate thin film according to claim 12 , wherein Ti content is 0.05 ppm or less.
14. The high-purity hafnium according to claim 1 , wherein Ni content is 0.04 to 0.18 ppm.
15. The high-purity hafnium according to claim 1 , wherein Ti content is to 0.05 ppm or less.