Barrier film for flexible copper substrate and sputtering target for forming barrier film
View Patent ↗A barrier film for a flexible copper substrate comprising a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is provided. The barrier film has a thickness of 3 to 150 nm and a film thickness uniformity of 10% or less at 1σ. A sputtering target for forming a barrier film comprising a Co—Cr alloy containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is also provided. The relative magnetic permeability in the in-plane direction of the sputtered face of the target is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling and inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch and has barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.
1. A flexible copper substrate, comprising:
a resin film, a layer of copper, and a barrier layer located between said resin film and said layer of copper;
said barrier layer separating said layer of copper from said resin film, inhibiting diffusion of copper from said layer of copper to said resin film, and resisting peeling from said resin layer;
said barrier layer consisting of a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of Co and having a film thickness of 3 to 150 nm and a film thickness uniformity of 10% or less at 1σ.
2. A flexible copper substrate according to claim 1 , wherein said Co—Cr alloy film is of uniform composition and non-segregated entirely throughout said Co—Cr alloy film to inhibit diffusion of copper therethrough at any location thereof.
3. A flexible copper substrate according to claim 1 , wherein said copper layer is in the form of a copper circuit pattern.
4. A flexible copper substrate according to claim 3 , wherein said copper circuit pattern has a minute wiring pitch of 30 μm or less and said barrier layer prevents short circuiting of said circuit pattern by inhibiting the diffusion of copper therethrough.
5. A flexible copper substrate according to claim 4 , wherein said minute wiring pitch includes wiring linewidth of 15 μm and a distance between wiring of 15 μm.
6. A flexible copper substrate according to claim 1 , wherein said barrier layer is a sputtered film produced by a thin film sputtering operation and is sputtered directly onto said resin film.
7. A flexible copper substrate according to claim 6 , wherein said layer of copper includes a copper seed layer produced by a thin film sputtering operation and is sputtered directly onto said barrier layer.
8. A flexible copper substrate according to claim 7 , wherein said layer of copper includes a copper plated layer electroplated directly on said copper seed layer.
9. A flexible copper substrate according to claim 8 , wherein said resin layer is a polyimide film.