Copper alloy sputtering target and semiconductor element wiring
View Patent ↗A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and/or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.
1. A copper alloy sputtering target for forming a seed layer of semiconductor wiring, comprising a sputtering target made of a copper alloy consisting of 0.5 to 4.0 wt % of Sn, 0.15 to 0.5 wtppm of Mn, and copper, and having an average crystal grain size of 0.1 to 60 μm, and an average grain size variation of within ±20%.
2. A copper alloy sputtering target according to claim 1 , wherein said copper alloy sputtering target has a recrystallized structure and a recrystallization temperature of 365° C. or less.
3. A copper alloy sputtering target according to claim 1 , wherein said copper alloy contains 0.15 to 0.35 wtppm of Mn.
4. A copper alloy sputtering target according to claim 1 , wherein said copper alloy contains 0.15, 0.20 or 0.35 wtppm of Mn.
5. A copper alloy sputtering target according to claim 1 , wherein said copper alloy contains 1 to 3 wt % of Sn.
6. A copper alloy sputtering target consisting of copper, 0.5 to 4.0 wt % of Sn, 5 wtppm or less of oxygen, and an amount of Mn of 0.15 to 0.5 wtppm to improve oxidation resistance, and said copper alloy sputtering target being for forming a seed layer of semiconductor wiring and having an average crystal grain size of 0.1 to 60 μm and an average grain size variation of within ±20%.
7. A copper alloy sputtering target according to claim 6 , wherein said copper alloy sputtering target contains 1 wtppm or less of oxygen.
8. A copper alloy sputtering target according to claim 6 , wherein said copper alloy sputtering target has a recrystallized structure and a recrystallization temperature of 365° C. or less.
9. A copper alloy sputtering target according to claim 6 , wherein said copper is high purity copper having a purity of 6N (99.9999%) or higher.
10. A copper alloy sputtering target consisting of copper, 0.5 to 4.0 wt % of Sn, 5 wtppm or less of oxygen, one or more elements selected from the group consisting of Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less, and an amount of Mn of 0.15 to 0.5 wtppm to improve oxidation resistance, and said copper alloy sputtering target being for forming a seed layer of semiconductor wiring and having an average crystal grain size of 0.1 to 60 μm and an average grain size variation of within ±20%.
11. A copper alloy sputtering target according to claim 10 , wherein said copper alloy sputtering target contains 1 wtppm or less of oxygen.
12. A copper alloy sputtering target according to claim 10 , wherein said copper alloy sputtering target has a recrystallized structure and a recrystallization temperature of 365° C. or less.
13. A copper alloy sputtering target according to claim 10 , wherein said copper is high purity copper having a purity of 6N (99.9999%) or higher.
14. A copper alloy sputtering target consisting of copper, Sn and Al with a total amount of Sn and Al being 0.5 to 4.0 wt %, one or more elements selected from the group consisting of Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less, and an amount of Mn of 0.15 to 0.5 wtppm, and said copper alloy sputtering target being for forming a seed layer of semiconductor wiring and having an average crystal grain size of 0.1 to 60 μm and an average grain size variation of within ±20%.