Semiconductor substrate with solid phase epitaxial regrowth with reduced junction leakage and method of producing same
Method of producing a semiconductor device, comprising: a) providing a semiconductor substrate, b) making a first amorphous layer in a top layer of the semiconductor substrate by a suitable implant, the first amorphous layer having a first depth, c) implanting a first dopant into the semiconductor substrate to provide the first amorphous layer with a first doping profile, d) applying a first solid phase epitaxial regrowth action to partially regrow the first amorphous layer and form a second amorphous layer having a second depth that is less than the first depth and activate the first dopant, e) implanting a second dopant into the semiconductor substrate to provide the second amorphous layer with a second doping profile with a higher doping concentration than the first doping profile, f) applying a second solid phase epitaxial regrowth action to regrow the second amorphous layer and activate the second dopant.
1. Method of producing a semiconductor device comprising:
a) providing a semiconductor substrate,
b) making a first amorphous layer in a top layer of said semiconductor substrate by a suitable implant, said first amorphous layer having a first depth,
c) implanting a first dopant into said semiconductor substrate to provide said first amorphous layer with a first doping profile,
d) applying a first solid phase epitaxial regrowth action to partially regrow said first amorphous layer and form a second amorphous layer having a second depth that is less than said first depth and activate said first dopant,
e) implanting a second dopant into said semiconductor substrate to provide said second amorphous layer with a second doping profile with a higher doping concentration than said first doping profile,
f) applying a second solid phase epitaxial regrowth action to regrow said second amorphous layer and activate said second dopant.
2. Method according to claim 1 , wherein said semiconductor substrate is a Si substrate and action b) is performed with at least one of Ge, GeF 2 , Si, Ar or Xe atoms.
3. Method according to claim 2 , wherein said action b) is performed with Ge in a dose of 10 15 atoms/cm 2 and an energy between 2 and 30 keV.
4. Method according to claim 1 , wherein said action c) is performed with at least one of B, P, As and In at an energy between 3 and 10 keV, and a dose of 10 14 atoms/cm 2 .
5. Method according to claim 1 , wherein action d) is performed at a temperature of 550-750° C. during a few seconds.
6. Method according to claim 1 , wherein said action e) is performed with at least one of B, P, As and In at an energy between 0.5 and 3 keV, and a dose of 10 15 atoms/cm 2 .
7. Method according to claim 1 , wherein prior to said action b), an initial dopant is implanted to provide a HALO implant area extending deeper than said first amorphous layer.