Gas barrier film and gas barrier laminate
The gas barrier film of the present invention is a gas barrier film comprising a base material, and an inorganic thin film composed of a silicon oxide film formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide film observed by an electron spin resonance method (ESR method) is from 1×10 16 to 1×10 19 spins/cm 3 , or a gas barrier film comprising a base material, an inorganic thin film containing silicon oxide and the other metal component formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide in the inorganic thin film observed by an ESR method is from 13×10 14 to 3×10 17 spins/mol, and a laminate wherein at least one paper and/or plastic film is laminated on the gas barrier film.
1. A gas barrier film comprising a base material, and an inorganic thin film comprising a silicon oxide film formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide film observed by an electron spin resonance method (ESR method) is from 1×10 16 to 1×10 19 spins/cm 3 ,
the thickness of the inorganic thin film is from 0.1 to 500 nm, and the inorganic thin film further comprises an inorganic substance selected from silicon, aluminum, magnesium, potassium, lithium, calcium, sodium, titanium, lead, and tin, or an oxide thereof, a carbide thereof or a nitride thereof.
2. The gas barrier film according to claim 1 , wherein the thickness of the inorganic thin film is from 0.5 to 40 nm.
3. The gas barrier film according to claim 1 , wherein the base material is at least one selected from polyester, polyamide, polyolefin and biodegradable resin.
4. The gas barrier film according to claim 1 , wherein an anchor coat layer is formed between the base material and the inorganic thin film.
5. The gas barrier film according to claim 4 , wherein the anchor coat layer is formed of at least one resin selected from the group consisting of polyester resin, urethane resin, acrylic resin and oxazoline group-containing resin.
6. The gas barrier film according to claim 1 , wherein a top coat layer is formed on the surface of at least one inorganic thin film.
7. The gas barrier film according to claim 6 , wherein the top coat layer is a layer made of at least one resin selected from polyester resin, urethane resin, acrylic resin, vinyl alcohol-based resin and oxazoline group-containing resin, or made of a resin containing, inorganic particles formed by mixing at least one kind of inorganic particles selected from silica sol, alumina sol, particulate inorganic filler and layered inorganic filler with at least one resin, or polymerizing a raw material of the resin in the presence of the inorganic particles.
8. A gas barrier laminate comprising the gas barrier film of claim 6 , a printed layer formed on the surface of the top coat of the gas barrier film, and a heat seal layer laminated on the printed layer.
9. The gas barrier film according to claim 1 , wherein a ratio of a value (P2) of steam permeability measured after 48 hours to a value (P1) of steam permeability measured by the method defined in JIS K 7129B after 3 hours under the conditions of 40° C. and 90% RH, (P2/P1), is 0.5 or more.
10. A gas barrier laminate comprising the gas barrier film of claim 1 , a printed layer formed on the surface of the inorganic thin film of the gas barrier film, and a heat seal layer laminated on the printed layer.
11. The gas barrier laminate according to claim 10 , wherein at least one paper and/or plastic film is formed between the printed layer and the heat seal layer.
12. The gas barrier laminate according to claim 10 , wherein a ratio of a value (P2) of steam permeability measured after 48 hours to a value (P1) of steam permeability measured by the method defined in JIS K 7129B after 3 hours under the conditions of 40° C. and 90% RH, (P2/P1), is 0.5 or more.
13. A gas barrier film comprising a base material, and
an inorganic thin film comprising silicon oxide and the other metal component formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide in the inorganic thin film observed by an ESR method is from 13×10 14 to 3×10 17 spins/mol, and wherein the thickness of the inorganic thin film is from 0.1 to 500 nm.
14. A gas barrier film comprising a base material, and an inorganic thin film comprising silicon oxide formed on one or both surfaces of the base material, wherein a ratio of radical density (S2) of the Pb center measured after heating the gas barrier film at 120° C. for 24 hours to radical density (S1) of the Pb center of the inorganic thin film observed by an ESR method, (S2/S1), is 0.5 or more, and wherein the thickness of the inorganic thin film is from 0.1 to 500 nm.