Etchant for wire, method of manufacturing wire using etchant, thin film transistor array panel including wire and manufacturing method thereof

A method of manufacturing a TFT array panel according to the present invention forms a gate wire on an insulating substrate. The gate wire includes a plurality of gate lines and a plurality of gate electrodes connected to the gate lines. A semiconductor layer and a gate insulating layer are sequentially formed and a data wire is formed thereon. The data wire includes a plurality of data lines intersecting the gate lines, a plurality of source electrodes connected to the data lines and placed close to the gate electrodes, and a plurality of drain electrodes opposite the source electrodes with respect to the gate electrodes. A passivation layer is deposited and patterned to form a plurality of contact holes exposing the drain electrodes at least. A conductive layer made of Ag or Ag alloy is deposited on the passivation layer, and is patterned using an etchant containing ferric nitrate, nitric acid, acetic acid, hexamethylenetetramine and deionized water to form a plurality of reflective films electrically connected to the drain electrodes.