Multi-level microchannel heat exchangers
View Patent ↗An apparatus and method of circulating a heat-absorbing material within a heat exchanger. The apparatus comprises a manifold layer coupled to an interface layer. The manifold layer comprises an inlet manifold and an outlet manifold. The interface layer comprises a plurality of channels that extend from the inlet manifold, toward a heat-exchanging plane, and turn away from the heat-exchanging plane, terminating at the outlet manifold. The plurality of channels are stacked in a plane non-parallel to the heat-exchanging plane. Each of the channels is adjacent to another, thus allowing heat radiated from a heat-generating device to be conducted to a cooling material circulating within the channels, away from the heat-generating device. Preferably, each of the channels has a U-shape or an elongated U-shape.
1. A heat exchanger comprising:
a. a manifold layer having a first plurality of openings for providing a cooling material to the heat exchanger and a second plurality of openings for removing the cooling material from the heat exchanger;
b. an interface layer coupled to the manifold layer, the interface layer having a plurality of vertically stacked routes, each route extending from one of the first plurality of openings and terminating at a corresponding one of the second plurality of openings, each route for carrying the cooling material, a cross-section of the plurality of routes substantially contained in a plane non-parallel to a heat-exchanging plane; and
c. a heat-generating device coupled to a bottom surface of the interface layer.
2. The heat exchanger of claim 1 , wherein each route is adjacent to another route, whereby heat can be exchanged between cooling material circulating within adjacent routes.
3. The heat exchanger of claim 2 , wherein each route extends from one of the first plurality of openings toward the heat-exchanging plane and then turns to extend away from the heat-exchanging plane toward a corresponding one of the second plurality of openings.
4. The heat exchanger of claim 3 , wherein each route is substantially U shaped.
5. The heat exchanger of claim 3 , wherein after a route extends from one of the first plurality of openings and before the route extends toward one of the second plurality of openings, the route extends substantially parallel to the heat-exchanging plane.
6. The heat exchanger of claim 1 , wherein the interface layer comprises a structural material having a thermal conductivity of at least approximately 20 W/m-K.
7. The heat exchanger of claim 6 , wherein the structural material comprises a semiconductor.
8. The heat exchanger of claim 6 , wherein the structural material comprises a metal.
9. The heat exchanger of claim 6 , wherein the structural material comprises a porous material that defines the plurality of routes.
10. The heat exchanger of claim 9 , wherein the porous material comprises a porous metal.
11. The heat exchanger of claim 9 , wherein the porous material comprises a silicon foam.
12. The heat exchanger of claim 6 , wherein the structural material exhibits anisotropic etching.
13. The heat exchanger of claim 12 , wherein the structural material that exhibits anisotropic etching is selected from the group consisting of micro-scale copper tubing and copper filaments.
14. The heat exchanger of claim 6 , wherein the structural material comprises a composite of materials.
15. The heat exchanger of claim 1 , wherein the cooling material comprises a liquid.
16. The heat exchanger of claim 15 , wherein the liquid comprises water.
17. The heat exchanger of claim 1 , wherein the cooling material comprises a vapor.
18. The heat exchanger of claim 1 , wherein the cooling material comprises a gas.
19. The heat exchanger of claim 1 , wherein the cooling material is air.
20. The heat exchanger of claim 1 , wherein a cross-section of the first plurality of openings and a cross-section of the second plurality of openings lie substantially in a single plane.
21. A heat exchanger comprising:
a. a manifold layer having a first plurality of openings for providing a cooling material to the heat exchanger and a second plurality of openings for removing the cooling material from the heat exchanger: and
b. an interface layer coupled to the manifold layer, the interface layer having a plurality of vertically stacked routes, each route extending from one of the first plurality of openings and terminating at a corresponding one of the second plurality of openings, each route for carrying the cooling material, a cross-section of the plurality of routes substantially contained in a plane non-parallel to a heat-exchanging plane; and
c. a heat insulator between the first plurality of openings and the second plurality of openings.
22. The heat exchanger of claim 21 , wherein the heat insulator comprises an air gap.
23. The heat exchanger of claim 21 , wherein the heat insulator comprises a vacuum gap.
24. The heat exchanger of claim 21 , wherein the heat insulator comprises an insulating material having a thermal conductivity of approximately 5 W/m-K or less.
25. The heat exchanger of claim 1 , wherein a cross-sectional dimension of a route changes as it extends from one of the first plurality of openings to one of a second plurality of openings.
26. The heat exchanger of claim 25 , wherein a cross-sectional dimension of a route increases uniformly as it extends from one of the first plurality of openings to a corresponding one of the second plurality of openings.
27. The heat exchanger of claim 1 , wherein the heat-generating device is formed integrally with the bottom surface of the interface layer.
28. The heat exchanger of claim 1 , wherein the heat-generating device is a semiconductor device.
29. The heat exchanger of claim 1 , wherein each route comprises a channel.
30. The heat exchanger of claim 1 , wherein the plurality of routes is defined by a plurality of pin fins.
31. The heat exchanger of claim 30 , wherein the plurality of pin fins are positioned cross-wise to the plurality of routes.
32. The heat exchanger of claim 1 , further comprising a pump coupled to the first plurality of openings.
33. The heat exchanger of claim 1 , wherein the manifold layer and the interface layer form a monolithic device.
34. A method of forming a heat exchanger comprising:
a. forming a manifold layer having a first plurality of openings for providing a cooling material to the heat exchanger and a second plurality of openings for removing the cooling material from the heat exchanger;
b. forming an interface layer coupled to the manifold layer, the interface layer having a plurality of vertically stacked routes that each extends from one of the first plurality of openings and terminates at a corresponding one of the second plurality of openings, each route for carrying the cooling material, a cross-section of the plurality of routes substantially contained in a plane non-parallel to a heat-exchanging plane; and
c. coupling a heat-generating device to a bottom surface of the interface layer.
35. The method of claim 34 , wherein each route is adjacent to another route.
36. The method of claim 34 , wherein each route extends from one of the first plurality of openings toward the heat-exchanging plane and then turns to extend away from the heat-exchanging plane toward a corresponding one of the second plurality of openings.
37. The method of claim 36 , wherein each route is substantially U shaped.
38. The method of claim 36 , wherein after a route extends from one of the first plurality of openings and before the route extends toward one of the second plurality of openings, the route extends substantially parallel to the heat-exchanging plane.
39. The method of claim 34 , wherein the interface layer comprises a structural material having a thermal conductivity of at least approximately 20 W/m-K.
40. The method of claim 39 , wherein the structural material comprises a semiconductor.
41. The method of claim 39 , wherein the structural material comprises a metal.
42. The method of claim 39 , wherein the structural material comprises a porous material defining the plurality of routes.
43. The method of claim 42 , wherein the porous material comprises a porous metal.
44. The method of claim 42 , wherein the porous material comprises a silicon foam.
45. The method of claim 39 , wherein the structural material exhibits anisotropic etching.
46. The method of claim 45 , wherein the structural material exhibiting anisotropic etching is selected from the group consisting of micro-scale copper tubing and copper filaments.
47. The method of claim 39 , wherein the structural material comprises a composite of materials.
48. The method of claim 34 , wherein a cross-section of the first plurality of openings and a cross-section of the second plurality of openings lie substantially in a single plane.
49. A method of forming a heat exchanger comprising:
a. forming a manifold layer having a first plurality of openings for providing a cooling material to the heat exchanger and a second plurality of openings for removing the cooling material from the heat exchanger;
b. forming an interface layer coupled to the manifold layer, the interface layer having a plurality of vertically stacked routes that each extends from one of the first plurality of openings and terminates at a corresponding one of the second plurality of openings, each route for carrying the cooling material, a cross-section of the plurality of routes substantially contained in a plane non-parallel to a heat-exchanging plane; and
c. forming a heat insulator between the first plurality of openings and the second plurality of openings.
50. The method of claim 49 , wherein the heat insulator comprises an air gap.
51. The method of claim 49 , wherein the heat insulator comprises a vacuum gap.
52. The method of claim 49 , wherein the heat insulator comprises a material having a thermal conductivity of approximately 5 W/m-K or less.
53. The method of claim 34 , wherein a cross-sectional dimension of a route changes as it extends from one of the first plurality of openings to a corresponding one of the second plurality of openings.
54. The method of claim 53 , wherein a cross-sectional dimension of a route increases uniformly as it extends from one of the first plurality of openings to a corresponding one of a second plurality of openings.
55. The method of claim 34 , wherein coupling a heat-generating device to a bottom surface of the interface layer comprises integrally forming the heat-generating device to the bottom surface of the interface layer.
56. The method of claim 55 , wherein the heat-generating device is a semiconductor device.
57. The method of claim 34 , wherein each route comprises a channel.
58. The method of claim 34 , wherein each route is defined by a plurality of pin fins.
59. The method of claim 58 , wherein the plurality of pin fins are positioned crosswise to the plurality of routes.
60. The method of claim 34 , wherein the manifold layer and the interface layer form a monolithic device.
61. The method of claim 34 , wherein the step of forming an interface layer comprises patterning a semiconductor device and etching the patterned semiconductor device to form the interface layer.
62. The method of claim 34 , wherein the step of forming an interface layer comprises stamping a sheet of metal in the shape of the plurality of routes.
63. The method of claim 34 , wherein the step of forming an interface layer comprises injection molding a metal in the shape of the plurality of routes.
64. A method of cooling a device comprising transmitting a cooling material from an inlet manifold, through a plurality of stacked routes positioned over the device, and to an outlet manifold.
65. The method of claim 64 , wherein the stacked routes comprise a structural material having a thermal conductivity of at least approximately 20 W/m-K.
66. The method of claim 65 , wherein the structural material comprises a semiconductor.
67. The method of claim 65 , wherein the structural material comprises a metal.
68. The method of claim 65 , wherein the structural material comprises a porous material that defines the plurality of stacked routes.
69. The method of claim 68 , wherein the porous material comprises a porous metal.
70. The method of claim 68 , wherein the porous material comprises a silicon foam.
71. The method of claim 65 , wherein the structural material exhibits anisotropic etching.
72. The method of claim 71 , wherein the structural material exhibiting anisotropic etching comprises a material selected from the group consisting of micro-scale copper tubing and copper filaments.
73. The method of claim 65 , wherein the structural material comprises a composite of materials.
74. The method of claim 64 , wherein the plurality of stacked routes comprises pin fins.
75. The method of claim 64 , wherein the cooling material comprises a liquid.
76. The method of claim 75 , wherein the liquid is water.
77. The method of claim 64 , wherein the cooling material comprises a vapor.
78. The method of claim 64 , wherein the cooling material comprises a gas.
79. The method of claim 64 , wherein the cooling material is air.