Semiconductor device having a dummy active region for controlling high density plasma chemical vapor deposition
View Patent ↗A dummy active region is formed in which abrading processes are averaged. A semiconductor device is characterized in that an active region for forming an actual device, a device separation region being formed by a trench, and a dummy active region formed substantially in a rectangular shape are included, and the length of the short side of the dummy active region is less than 1 μm.
1. A semiconductor device formed on a semiconductor substrate, said semiconductor device comprising:
an active region formed on the semiconductor substrate;
a dummy active region formed on the semiconductor substrate in a rectangular shape, wherein a length of a short side of said dummy active region is substantially no greater than 1 μm and more than 0.5 μm, wherein a distance between said active region and said dummy active region is greater than 0.5 μm and less than 10 μm; and
an isolation region formed on the semiconductor substrate and surrounding said active region and said dummy active region.
2. A semiconductor device according to claim 1 , wherein said isolation region includes a trench filled with a high density plasma chemical vapor deposition layer.
3. A semiconductor device according to claim 2 , wherein a depth of the trench is about 2500 Å to 5000 Å.
4. A semiconductor device according to claim 2 , wherein the trench has a tapered shape.
5. A semiconductor device according to claim 4 , wherein a width of an opening of the trench is wider than a width of a bottom of the trench.
6. A semiconductor device according to claim 5 , wherein the width of the opening of the trench is 0.5 to 1 μm.
7. A semiconductor device according to claim 2 , wherein a taper angle of the trench is about 70 to 90 degrees.
8. A semiconductor device according to claim 2 , wherein the high density plasma chemical vapor deposition layer is an oxide film.
9. A semiconductor device according to claim 8 , wherein the oxide film is abraded by Chemical Mechanical Polishing (CMP).
10. A semiconductor device formed on a semiconductor substrate, said semiconductor device comprising:
an active region formed on the semiconductor substrate;
a dummy active region formed on the semiconductor substrate in a rectangular shape, wherein a length of a short side of said dummy active region is substantially no greater than 1 μm and more than 0.5 μm, wherein a distance between said active region and said dummy active region is greater than 0.5 μm and less than 10 μm;
an isolation region formed on the semiconductor substrate and surrounding said active region and said dummy active region; and
a semiconductor element formed on said active region, said semiconductor element including a gate electrode formed over said active region, wherein a distance between said dummy active region and said gate electrode is more than 0.5 μm.
11. A semiconductor device according to claim 10 , wherein said isolation region includes a trench filled with a high density plasma chemical vapor deposition layer.
12. A semiconductor device according to claim 11 , wherein a depth of the trench is about 2500 Å to 5000 Å.
13. A semiconductor device according to claim 11 , wherein the trench has a tapered shape.
14. A semiconductor device according to claim 13 , wherein a width of an opening of the trench is wider than a width of a bottom of the trench.
15. A semiconductor device according to claim 14 , wherein the width of the opening of the trench is 0.5 to 1 μm.
16. A semiconductor device according to claim 11 , wherein a taper angle of the trench is about 70 to 90 degrees.
17. A semiconductor device according to claim 11 , wherein the high density plasma chemical vapor deposition layer is an oxide film.
18. A semiconductor device according to claim 17 , wherein the oxide film is abraded by Chemical Mechanical Polishing (CMP).