Reliability-enhancing layers for vertical cavity surface emitting lasers
View Patent ↗Vertical cavity surface emitting lasers (VCSELs) and methods of making the same are described. The VCSELs include reliability-enhancing layers that perform specific functions at one or more critical locations within a VCSEL structure to reduce or prevent defect formation and migration that otherwise might degrade VCSEL performance, for example, by increasing optical absorption in the mirror stacks or by degrading the electro-optic properties of the active region. In particular, the reliability-enhancing layers are configured to perform one or more of the following functions within the VCSEL structure: gettering (i.e., removing defects or impurities from critical regions), strain balancing (i.e., compensating the lattice mismatch in the structure to minimize strain), and defect suppression (i.e., creating alloys that reduce the formation of defects during growth or post-growth activities). By strategically positioning one or more appropriately configured reliability-enhancing layers with respect to an identified defect source, the invention enables VCSEL structures to be modified in a way that enhances the reliability and performance of VCSEL devices.
1. A vertical cavity surface emitting laser (VCSEL), comprising:
a first minor stack;
a second mirror stack;
a cavity region disposed between the first mirror stack and the second mirror stack, wherein the first mirror stack, the cavity region, and the second mirror stack are arranged along a vertical direction, and the cavity region includes an active region, a first side facing the first mirror stack, and a second side facing the second mirror stack;
a defect source located such that only one of the first and second sides of the cavity region faces the defect source; and
a reliability-enhancing layer positioned within the defect source and producing a localized strain field within the defect source to reduce migration of defects in the vertical direction from the defect source to the active region, whereby the reliability-enhancing layer reduces defect-induced degradation of the active region by the defect source.
2. The VCSEL of claim 1 , wherein the defect source comprises an implant region.
3. A vertical cavity surface emitting laser (VCSEL), comprising:
a first mirror stack;
a second mirror stack;
a cavity region disposed between the first mirror stack and the second mirror stack and including an active region;
a defect source;
a first reliability-enhancing layer positioned with respect to the defect source and producing a localized strain field to reduce defect-induced degradation of the active region by the defect source, wherein the defect source is disposed between the reliability-enhancing layer and the cavity region; and
a second reliability-enhancing layer positioned with respect to the defect source and producing a localized strain field that reduces defect-induced degradation of the active region by the defect source, wherein the second reliability-enhancing layer is separated from the first reliability-enhancing layer by one or more other layers and the first and second reliability-enhancing layers are located on opposite sides of the defect source.
4. A vertical cavity surface emitting laser (VCSEL), comprising:
a first mirror stack:
a second mirror stack;
a cavity region disposed between the first mirror stack and the second mirror stack and including an active region;
a strained defect source that creates a first strain field; and
a strained reliability-enhancing layer positioned with respect to the defect source to reduce defect-induced degradation of one or more VCSEL regions, wherein the reliability-enhancing layer creates a second strain field that at least in part balances the first strain field created by the defect source.
5. The VCSEL of claim 4 , wherein the reliability-enhancing layer is adjacent the defect source.
6. A vertical cavity surface emitting laser (VCSEL), comprising:
a first mirror stack;
a second mirror stack;
a cavity region disposed between the first mirror stack and the second mirror stack and including an active region;
a defect source, wherein the defect source includes an oxide region inducing a compressive strain field; and
a reliability-enhancing layer positioned with respect to the defect source to reduce defect-induced degradation of one or more VCSEL regions, wherein the reliability-enhancing layer is configured to at least in part balance strain created by the defect source, and the reliability-enhancing layer is positioned within the compressive strain field and is characterized by tensile strain.
7. A vertical cavity surface emitting laser (VCSEL), comprising:
a first mirror stack;
a second mirror stack;
a cavity region disposed between the first mirror stack and the second mirror stack and including an active region;
a defect source; and
a reliability-enhancing layer positioned with respect to the defect source to reduce defect-induced degradation of one or more VCSEL regions, wherein the reliability-enhancing layer is configured to at least in part balance strain created by the defect source;
wherein at least one of the first and second mirror stacks comprises oxidized AlGaAs layers, the defect source corresponds to at least one of the oxidized AlGaAs layers, and the reliability-enhancing layer is formed from InxGa1−xP, wherein x<0.5 tensile.
8. A vertical cavity surface emitting laser (VCSEL), comprising:
a first mirror stack;
a second mirror stack;
a cavity region disposed between the first mirror stack and the second mirror stack and including an active region;
a defect source; and
a reliability-enhancing layer positioned with respect to the defect source to reduce defect-induced degradation of one or more VCSEL regions, wherein the defect source creates a concentration gradient inducing defect migration, and the reliability-enhancing layer introduces strain that reduces the induced defect migration.
9. The VCSEL of claim 8 , wherein the defect source creates a Group V element vacancy gradient, and the reliability-enhancing layer has a Group V element vacancy concentration selected to block defect migration from the defect source to the active region.
10. A method of manufacturing a vertical cavity surface emitting laser (VCSEL), comprising:
forming a first mirror stack, a second mirror stack, and a cavity region disposed therebetween, wherein the first mirror stack, the cavity region, and the second mirror stack are arranged along a vertical direction, and the cavity region includes an active region, a first side facing the first mirror stack, and a second side facing the second mirror stack;
forming a defect source located such that only one of the first and second sides of the cavity region faces the defect source; and
forming a reliability-enhancing layer, wherein the reliability-enhancing layer is positioned within the defect source and produces a localized strain field within the defect source that reduces migration of defects in the vertical direction from the defect source to the active region, whereby the reliability-enhancing layer reduces defect-induced degradation of the active region by the defect source.
11. The method of claim 10 , wherein the defect source comprises an implant region.
12. A method of manufacturing a vertical cavity surface emitting laser (VCSEL), comprising:
forming a first mirror stack, a second mirror stack, and a cavity region disposed therebetween, wherein the cavity region includes an active region;
forming a defect source;
forming a first reliability-enhancing layer producing a localized strain field positioned with respect to the defect source to reduce defect-induced degradation of the active region by the defect source, wherein the defect source is disposed between the reliability-enhancing layer and the cavity region; and
forming a second reliability-enhancing layer producing a localized strain field positioned with respect to the defect source to reduce defect-induced degradation of the active region by the defect source, wherein the second reliability-enhancing layer is separated from the first reliability-enhancing layer by one or more other layers and the first and second reliability-enhancing layers are located on opposite sides of the defect source.
13. A method of manufacturing a vertical cavity surface emitting laser (VCSEL), comprising:
forming a first mirror stack, a second mirror stack, and a cavity region disposed therebetween, wherein the cavity region includes an active region;
forming a strained defect source that creates a first strain field; and
forming a strained reliability-enhancing layer positioned with respect to the defect source to reduce defect-induced degradation of one or more VCSEL regions, wherein the reliability-enhancing layer creates a second strain field that at least in part balances the first strain field created by the defect source.
14. The method of claim 13 , wherein the reliability-enhancing layer is adjacent the defect source.
15. A method of manufacturing a vertical cavity surface emitting laser (VCSEL), comprising:
forming a first mirror stack, a second mirror stack, and a cavity region disposed therebetween, wherein the cavity region includes an active region;
forming a defect source, wherein the defect source includes an oxide region inducing a compressive strain field; and
forming a reliability-enhancing layer positioned with respect to the defect source to reduce defect-induced degradation of one or more VCSEL regions, wherein the reliability-enhancing layer is configured to at least in part balance strain created by the defect source, and the reliability-enhancing layer is positioned within the compressive strain field and is characterized by tensile strain.
16. A method of manufacturing a vertical cavity surface emitting laser (VCSEL), comprising:
forming a first mirror stack, a second mirror stack, and a cavity region disposed therebetween, wherein the cavity region includes an active region, wherein at least one of the first and second mirror stacks comprises oxidized AlGaAs layers;
forming a defect source, wherein the defect source corresponds to at least one of the oxidized AlGaAs layers; and
forming a reliability-enhancing layer positioned with respect to the defect source to reduce defect-induced degradation of one or more VCSEL regions, wherein the reliability-enhancing layer is configured to at least in part balance strain created by the defect source, and the reliability-enhancing layer is formed from InxGa1−xP, wherein x<0.5 tensile.
17. A method of manufacturing a vertical cavity surface emitting laser (VCSEL), comprising:
forming a first mirror stack, a second mirror stack, and a cavity region disposed therebetween, wherein the cavity region includes an active region;
forming a defect source; and
forming a reliability-enhancing layer positioned with respect to the defect source to reduce defect-induced degradation of one or more VCSEL regions, wherein the defect source creates a concentration gradient inducing defect migration, and the reliability-enhancing layer introduces strain that reduces the induced defect migration.
18. The method of claim 17 , wherein the defect source creates a Group V element vacancy gradient, and the reliability-enhancing layer has a Group V element vacancy concentration selected to block defect migration from the defect source to the active region.
19. A vertical cavity surface emitting laser (VCSEL), comprising:
a first mirror stack;
a second mirror stack;
a cavity region disposed between the first mirror stack and the second mirror stack and including an active region;
a defect source; and
a reliability-enhancing layer positioned with respect to the defect source to reduce defect-induced degradation of one or more VCSEL regions, wherein the reliability-enhancing layer is within the defect source and is configured to at least in part balance strain created by the defect source.
20. A method of manufacturing a vertical cavity surface emitting laser (VCSEL), comprising:
forming a first mirror stack, a second mirror stack, and a cavity region disposed therebetween, wherein the cavity region includes an active region;
forming a defect source; and
forming a reliability-enhancing layer positioned with respect to the defect source to reduce defect-induced degradation of one or more VCSEL regions, wherein the reliability-enhancing layer is within the defect source and is configured to at least in part balance strain created by the defect source.