Opaque low resistivity silicon carbide
An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
1. A method of making a low resistivity silicon carbide article comprising reacting silicon carbide precursors in a nitrogen atmosphere to form low resistivity silicon carbide, and depositing the low resistivity silicon carbide on a substrate.
2. The method of claim 1 , wherein the nitrogen atmosphere is greater than 32% by volume of nitrogen.
3. The method of claim 2 , wherein the nitrogen atmosphere comprises about 45% by volume to about 50% by volume of nitrogen.
4. The method of claim 1 , wherein the low resistivity silicon carbide has an electrical resistivity of less than 0.1 ohm-cm.
5. The method of claim 4 , wherein the low resistivity silicon carbide has an electrical resistivity of from about 0.005 ohm-cm to about 0.05 ohm-cm.
6. The method of claim 5 , wherein the low resistivity silicon carbide comprises greater than 1.5×10 19 atoms of nitrogen/cm 3 .
7. The method of claim 6 , wherein the low resistivity silicon carbide contains from about 2×10 19 atoms of nitrogen/cm 3 to about 3×10 19 atoms of nitrogen/cm 3 .
8. The method of claim 1 , wherein the low resistivity silicon carbide is prepared by chemical vapor deposition.
9. The method of claim 8 , wherein a partial pressure of nitrogen in a chemical vapor deposition chamber is from about 80 torr to about 110 torr.
10. The method of claim 9 , wherein the partial pressure of nitrogen in the chemical vapor deposition chamber is from about 90 torr to about 105 torr.
11. The method of claim 1 , wherein the nitrogen is provided as nitrogen gas, volatile organic compounds containing —NO 2 , amine groups, quaternary amines, compounds of —N(H) 4 + , aqueous —NO 3 − salts, halogenated nitrogen compounds, NH 3 or mixtures thereof.
12. The method of claim 11 , wherein the nitrogen is provided as NF 3 .
13. The method of claim 1 , further comprising exposing the low resistivity silicon carbide to a temperature of at least about 250° C. to provide a low resistivity silicon carbide opaque at a light wavelength of from about 0.1 μm to about 1.0 μm.
14. The method of claim 13 , wherein the low resistivity silicon carbide is exposed to a temperature of from at least about 250° C. to about 1450° C. to provide a low resistivity silicon carbide opaque to light at a wavelength of from about 0.1 μm to about 1.0 μm.
15. The method of claim 14 , wherein the low resistivity silicon carbide is exposed to a temperature of from about 300° C. to about 1250° C. to provide a low resistivity silicon carbide opaque to light at a wavelength of from about 0.1 μm to about 1.0 μm.
16. The method of claim 13 , wherein the low resistivity silicon carbide is opaque to light at a wavelength of from about 0.7 μm to about 0.95 μm.
17. A method of making an opaque low resistivity silicon carbide article by chemical vapor deposition comprising providing silicon carbide precursor methyltrichlorosilane and hydrogen gas in an atmosphere of nitrogen gas at a partial pressure of from about 90 torr to about 105 torr; providing a reaction chamber temperature of from about 1250° C. to about 1400° C.; reacting methyltrichlorosilane and nitrogen gas to form a low resitivity silicon carbide deposit on a mandrel, the low resistivity silicon carbide has an electrical resistivity of from about 0.005 ohm-cm to about 0.05 ohm-cm; and exposing the low resistivity silicon carbide to a temperature of at least about 250° C. to provide a low resistivity silicon carbide opaque to light at a wavelength of from about 0.1 μm to about 1.0 μm.
18. The method of claim 17 , wherein the low resistivity silicon carbide comprises from about 2×10 19 atoms of nitrogen/cm 3 to about 3×10 19 atoms of nitrogen/cm 3 .
19. The method of claim 17 , wherein the low resistivity silicon carbide article is exposed to a temperature of at least about 250° C. in an RTP chamber.
20. The method of claim 19 , wherein the low resistivity silicon carbide article is an edge ring or susceptor ring.
21. The method of claim 20 , wherein the edge ring or susceptor ring contains a semi-conductor wafer.