Semiconductor device for preventing defective filling of interconnection and cracking of insulating film
View Patent ↗The semiconductor device has insulating films 40, 42 formed over a substrate 10 ; an interconnection 58 buried in at least a surface side of the insulating films 40, 42 ; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66 a having a pattern bent at a right angle; and buried conductors 70, 72 a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66 a . A groove-shaped via-hole 66 a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66 . Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.
1. A semiconductor device comprising:
a first insulating film formed over a substrate;
a first interconnection buried in at least a surface side of the first insulating film, the first interconnection having a first pattern which is bent at right angle and a second pattern;
a second insulating film formed on the first insulating film with the first interconnection buried in, and including a groove-shaped via-hole formed in a region above the first pattern of the first interconnection and a hole-shaped via-hole formed in a region above the second pattern, of the first interconnection, the groove-shaped via-hole having a pattern which is formed along an extending direction of the first interconnection and is bent at a right angle, a width of the groove-shaped via-hole being 20-140% of a width of the hole-shaped via-hole;
a first buried conductor filled in the groove-shaped via-hole; and
a second buried conductor buried in the hole-shaped via-hole.
2. A semiconductor device comprising:
a first insulating film formed over a substrate;
a first interconnection buried in at least a surface side of the first insulating film, the first interconnection having a first pattern which is bent at right angle and a second pattern;
a second insulating film formed on the first insulating film with the first interconnection buried in, and including a groove-shaped via-hole formed in a region above the first pattern of the first interconnection and a hole-shaped via-hole formed in a region above the second pattern of the first interconnection, the groove-shaped via-hole having a pattern which is formed along an extending direction of the first interconnection and is bent at a right angle, a width of the groove-shaped via-hole being not more than a width of the hole-shaped via-hole;
a first buried conductor filled in the groove-shaped via-hole; and
a second buried conductor buried in the hole-shaped via-hole.
3. A semiconductor device comprising:
a conducting layer buried in a surface side of a substrate, the conducting layer having a first pattern which is bent at a right angle and a second pattern;
an insulating film formed on the substrate with the conducting layer buried in, and including a groove-shaped via-hole formed in a region above the first pattern of the conducting layer and a hole-shaped via-hole formed in a region above the second pattern of the conducting layer, the via-hole having a pattern which is formed along an extending direction of the conducting layer and is bent at a right angle, a width of the groove-shaped via-hole being 20-140% of a width of the hole-shaped via-hole;
a first buried conductor filled in the groove-shaped via-hole; and
a second buried conductor buried in the hole-shaped via-hole.
4. A semiconductor device according to claim 1 , wherein
the first interconnection is formed of a conductor which is mainly formed of copper.
5. A semiconductor device according to claim 1 , further comprising:
a second interconnection formed on the second insulating film and formed of a conductor which is mainly formed of aluminum.
6. A semiconductor device according to claim 5 , wherein the first interconnection and the second interconnection have the same pattern.
7. A semiconductor device according to claim 1 , wherein
the first buried conductor and the second buried conductor are formed of a conductor mainly formed of tungsten.
8. A semiconductor device according to claim 1 , wherein
the second insulating film includes a silicon nitride film and a silicon oxide film formed over the silicon nitride film.
9. A semiconductor device according to claim 1 , wherein
the first insulating film includes a silicon nitride film and a silicon oxide film formed over the silicon nitride film.
10. A semiconductor device according to claim 1 , wherein the second insulating film includes an SiC film and a silicon oxide film formed over the SiC film.
11. A semiconductor device according to claim 1 , wherein the first insulating film includes an SiC film and an SiOC film formed over the SiC film.
12. A semiconductor device according to claim 1 , wherein the first buried conductor completely fills the groove-shaped via-hole without any voids.
13. A semiconductor device comprising:
a conducting layer buried in a surface side of a substrate, the conducting layer having a first pattern which is bent at a right angle and a second pattern;
an insulating film formed on the substrate with the conducting layer buried in, and including a groove-shaped via-hole formed in a region above the first pattern of the conducting layer and a hole-shaped via-hole formed in a region above the second pattern of the conducting later, the groove-shaped via-hole having a pattern which is formed along an extending direction of the conducting layer and is bent at a right angle, a width of the groove-shaped via-hole being not more than a width of the hole-shaped via-hole;
a first buried conductor filled in the groove-shaped via-hole; and
a second buried conductor buried in the hole-shaped via-hole.
14. A semiconductor device according to claim 2 , wherein
the first interconnection is formed of a conductor which is mainly formed of copper.
15. A semiconductor device according to claim 2 , further comprising:
a second interconnection formed on the second insulating film and formed of a conductor which is mainly formed of aluminum.
16. A semiconductor device according to claim 15 , wherein
the first interconnection and the second interconnection have the same pattern.
17. A semiconductor device according to claim 2 , wherein
the first buried conductor and the second buried conductor are formed of a conductor mainly formed of tungsten.
18. A semiconductor device according to claim 3 , wherein
the first buried conductor and the second buried conductor are formed of a conductor mainly formed of tungsten.
19. A semiconductor device according to claim 13 , wherein
the first buried conductor and the second buried conductor are formed of a conductor mainly formed of tungsten.
20. A semiconductor device according to claim 1 , wherein
the first insulating film includes an SiC film and an SiOC film formed over the SiC film.