Electron microscopy system
A particle-optical apparatus is disclosed which combines the functions of an energy selector 27 and a beam splitter 21. The particle-optical apparatus is used in an electron microscopy system and serves to separate and superimpose, respectively, beam paths of a primary electron beam 11 and a secondary electron beam 13.
1. An electron microscopy system for inspecting an object positionable in an object plane, comprising:
a beam splitter for separating a beam path of a primary electron beam from a beam path of a secondary electron beam,
an electron source for generating the primary electron beam, and
an objective lens disposed in the beam path of the primary electron beam downstream of the beam splitter for guiding the primary electron beam to the object plane and for guiding secondary electrons emanating from a region around the object plane towards the beam splitter, the secondary electrons forming the secondary electron beam,
wherein at least one of at least one beam deflector and at least one quadrupole lens is disposed in the beam path of the secondary electron beam downstream of the beam splitter, and
wherein the electron microscopy system further comprises and energy adjusting apparatus for adjusting a kinetic energy of the electrons of the secondary electron beam entering the beam splitter, and a controller for controlling the energy adjusting apparatus, wherein the controller further controls said at least one of the at least one beam deflector and the at least one quadrupole lens in dependence of the adjusted energy.
2. The electron microscopy system according to claim 1 , wherein the controller comprises a memory for storing corresponding values representing the kinetic energy of the secondary electron beam entering the beam splitter, and representing settings of the at least one beam deflector and the quadrupole lens, respectively.
3. An electron microscopy system for inspecting an object positionable in an object plane, comprising:
a beam splitter for separating a beam path of a primary electron beam from a beam path of a secondary electron beam,
an electron source for generating the primary electron beam,
an objective lens disposed in the beam path of the primary electron beam downstream of the beam splitter for guiding the primary electron beam to the object plane and for guiding secondary electrons emanating from a region around the object plane towards the beam splitter, the secondary electrons forming the secondary electron beam,
wherein at least one of at least one beam deflector and at least one quadrupole lens is disposed in the beam path of the secondary electron beam downstream of the beam splitter, and
wherein the electron microscopy system further comprises an energy selector which is provided in the beam path of the primary electron beam between the electron source and the beam splitter and which transmits charged particles of the primary electron beam whose kinetic energy is in a predetermined energy range and does substantially not transmit charged particles whose kinetic energy is outside of the predetermined energy range, wherein the energy selector comprises a magnetic pole arrangement with a plurality of magnetic pole pairs, and wherein a magnetic field for deflecting the charged particles transmitted by the energy selector is provided between each magnetic pole pair, and wherein the beam splitter comprises at least one magnetic pole pair of the energy selector.
4. The electron microscopy system according to claim 1 , wherein the objective lens focuses the primary electron beam to provide a focused primary electron beam in the object plane.
5. The electron microscopy system according to claim 1 , wherein the objective lens forms part of an imaging beam path with which the object plane is imaged substantially sharply on a secondary electron detector by the secondary electron beam.
6. An electron microscopy system for inspecting an object which is positionable in an object plane, comprising:
a beam splitter for separating a beam path of a primary electron beam from a beam path of a secondary electron beam,
an electron source for generating the primary electron beam,
a beam guiding system for guiding the primary electron beam from the electron source to the beam splitter,
an objective lens disposed in the beam path of the primary electron beam downstream of the beam splitter for guiding the primary electron beam to the object plane and for guiding secondary electrons emanating from a region about the object plane towards the beam splitter, the secondary electrons forming the secondary electron beam, and
an energy selector which is provided in the beam path of the secondary electron beam and which transmits charged particles of the secondary electron beam whose kinetic energy is in a predetermined energy range and does substantially not transmit charged particles whose kinetic energy is outside of the predetermined energy range, wherein the energy selector comprises a magnetic pole arrangement with a plurality of magnetic pole pairs, and wherein a magnetic field for deflecting the charged particles transmitted by the energy selector is provided between each magnetic pole pair,
wherein the beam splitter comprises at least one magnetic pole pair of the energy selector, and wherein the beam guiding system comprises in the beam path of the primary electron beam two spaced apart beam deflectors for generating adjustable deflection angles of the primary electron beam,
wherein the electron microscopy system is a scanning electron microscopy system configured such that the objective lens focuses the primary electron beam to provide a focused primary electron beam in the object plane, the scanning electron microscopy system comprising a deflection device for systematically scanning the focused primary electron beam across a portion of the object plane, and
wherein the electron microscopy system further comprises an energy adjusting apparatus for adjusting a kinetic energy of the electrons of the primary electron beam entering the beam splitter and a controller for controlling the energy adjusting apparatus, the controller further controlling the two beam deflectors for adjusting the deflection angles in dependence of the adjusted energy.
7. The electron microscopy system according to claim 6 , wherein the controller comprises a memory for storing corresponding values representing the kinetic energy of the primary electron beam entering the beam splitter, and representing settings of the two beam deflectors.
8. The electron microscopy system according to claim 6 , wherein the objective lens forms part of an imaging beam path with which the object plane is imaged substantially sharply on a secondary electron detector by the secondary electron beam.
9. An electron microscopy system for inspecting an object which is positionable in an object plane, comprising:
a beam splitter for separating a beam path of a primary electron beam from a beam path of a secondary electron beam,
an electron source for generating the primary electron beam,
a beam guiding system for guiding the primary electron beam from the electron source to the beam splitter,
an objective lens disposed in the beam path of the primary electron beam downstream of the beam splitter for guiding the primary electron beam to the object plane and for guiding secondary electrons emanating from a region about the object plane towards the beam splitter, the secondary electrons forming the secondary electron beam, and
an energy selector which is provided in the beam path of the secondary electron beam and which transmits charged particles of the secondary electron beam whose kinetic energy is in a predetermined energy range and does substantially not transmit charged particles whose kinetic energy is outside of the predetermined energy range, wherein the energy selector comprises a magnetic pole arrangement with a plurality of magnetic pole pairs, and wherein a magnetic field for deflecting the charged particles transmitted by the energy selector is provided between each magnetic pole pair,
wherein the beam splitter comprises at least one magnetic pole pair of the energy selector, and wherein the beam guiding system comprises a quadrupole lens with adjustable quadrupole strength arranged in the beam path of the primary electron beam.
10. The electron microscopy system according to claim 9 , further comprising an energy adjusting apparatus for adjusting a kinetic energy of the electrons of the primary electron beam entering the beam splitter and a controller for controlling the energy adjusting apparatus, wherein the controller further controls the quadrupole lens for adjusting the quadrupole strength in dependence of the adjusted energy.
11. The electron microscopy system according to claim 10 , wherein the controller comprises a memory for storing corresponding values representing the kinetic energy of the primary electron beam entering the beam splitter, and representing settings of the two beam deflectors.
12. The electron microscopy system according to claim 9 , wherein the objective lens focuses the primary electron beam to provide a focused primary electron beam in the object plane.
13. The electron microscopy system according to claim 9 , wherein the objective lens forms part of an imaging beam path with which the object plane is imaged substantially sharply on a secondary electron detector by the secondary electron beam.
14. An electron microscopy system for inspecting an object which is positionable in an object plane, comprising:
a beam splitter for separating a beam path of a primary electron beam from a beam path of a secondary electron beam,
an electron source for generating the primary electron beam,
a beam guiding system for guiding the primary electron beam from the electron source to the beam splitter,
an objective lens disposed in the beam path of the primary electron beam downstream of the beam splitter for guiding the primary electron beam to the object plane and for guiding secondary electrons emanating from a region about the object plane towards the beam splitter, the secondary electrons forming the secondary electron beam, and
an energy selector which is provided in the beam path of the secondary electron beam and which transmits charged particles of the secondary electron beam whose kinetic energy is in a predetermined energy range and does substantially not transmit charged particles whose kinetic energy is outside of the predetermined energy range, wherein the energy selector comprises a magnetic pole arrangement with a plurality of magnetic pole pairs, and wherein a magnetic field for deflecting the charged particles transmitted by the energy selector is provided between each magnetic pole pair,
wherein the beam splitter comprises at least one magnetic pole pair of the energy selector, and in that an angle between a direction of the primary electron beam after having been emitted by the electron source and a direction of the primary electron beam when emerging from the beam splitter is smaller than 80°.
15. The electron microscopy system according to claim 14 , wherein said angle between a direction of the primary electron beam after having been emitted by the electron source and a direction of the primary electron beam when emerging from the beam splitter is smaller than 60°.
16. The electron microscopy system according to claim 1 , further comprising an energy selector which is provided in the beam path of the primary electron beam between the electron source and the beam splitter and which transmits charged particles of the primary electron beam whose kinetic energy is in a predetermined energy range and does substantially not transmit charged particles whose kinetic energy is outside of the predetermined energy range, wherein the energy selector comprises a magnetic pole arrangement with a plurality of magnetic pole pairs, and wherein a magnetic field for deflecting the charged particles transmitted by the energy selector is provided between each magnetic pole pair, and wherein the beam splitter comprises at least one magnetic pole pair of the energy selector.
17. The electron microscopy system according to claim 3 , wherein the objective lens focuses the primary electron beam to provide a focused primary electron beam in the object plane.
18. The electron microscopy system according to claim 3 , wherein the objective lens forms part of an imaging beam path with which the object plane is imaged substantially sharply on a secondary electron detector by the secondary electron beam.
19. The electron microscopy system of claim 9 , wherein the beam guiding system further comprises in the beam path of the primary electron beam two spaced apart beam deflectors or generating adjustable deflection angles of the primary electron beam.
20. The electron microscopy system of claim 19 , wherein the controller is further adapted to control the two beam deflectors for adjusting the deflection angles in dependence of the adjusted energy.