Plastic substrate, fabrication method thereof and device using the same
View Patent ↗A plastic substrate for OLED, fabrication method thereof and device using the substrate. The OLED comprises a plastic substrate with a deposition film of predetermined thickness formed thereon by plasma CVD. The deposition film has the formula SiO e C a H b X c Y d Z f (e≦2, 2−e=a+b+c+d+f), wherein X, Y and Z are periodic table IA, IIA, IIIA, IVA, VA, VIA or VIIA elements excepting H. X, Y and Z also can be selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt and Au. The OLED with the plastic substrate has both glass and plastic properties, including high temperature tolerance, good gas and liquid resistance, superior planarity, and high transparency and high flexibility.
1. An organic electroluminescent device, comprising:
a cathode;
an anode;
at least an organic layer between the anode and the cathode, such that when a voltage is applied to the cathode and the anode, the organic layer electroluminesces;
a first substrate beneath the cathode; and
a second plastic substrate above the anode, comprising:
a plastic substrate; and
a deposition film with a predetermined thickness formed on the plastic substrate by plasma chemical vapor deposition, the film having a formula of SiO e C a H b X c Y d Z f , wherein both e≦2 and 2−e=a+b+c+d+f are satisfied, wherein X, Y and Z are selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt, Au and the elements in periodic table IA, IIA, IIIA, IVA, VA, VIA and VIIA excepting H, the deposition film having transparency of at least 97%.
2. A plastic substrate for organic electroluminescent devices comprising:
a plastic substrate;
a deposition film with a predetermined thickness formed on the plastic substrate by plasma chemical vapor deposition, the film having a formula of SiO e C a H b X c Y d Z f , wherein both e≦2 and 2−e=a+b+c+d+f are satisfied, wherein X, Y and Z are selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt, Au and the elements in periodic table IA, IIA, IIIA, IVA, VA, VIA and VIIA excepting H, the deposition film having transparency of at least 97%; and
a plurality of interface covalent bonds disposed between the deposition film layer and the plastic substrate.
3. The plastic substrate for organic electroluminescent devices as claimed in claim 2 , wherein the predetermined thickness is 0.1 to 4.5 μm.
4. The plastic substrate for organic electroluminescent devices as claimed in claim 2 , wherein a thickness of the interface covalent bonds is 20 to 30 Å.
5. A fabrication method for the plastic substrate for organic electroluminescent devices, comprising the steps of:
providing a plastic substrate; and
performing plasma chemical vapor deposition to form a deposition film of predetermined thickness on the plastic substrate, the film having a formula of SiO e C a H b X c Y d Z f , wherein both e≦2 and 2−e=a+b+c+d+f are satisfied, wherein X, Y and Z are selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt, Au and the elements in periodic table IA, IIA, IIIA, IVA, VA, VIA and VIIA excepting H, the deposition film having transparency of at least 97%, wherein a plurality of free radicals in the plasma produce an interface covalent bonds between the deposition film layer and the plastic substrate.
6. The fabrication method for the plastic substrate for organic electroluminescent devices as claimed in claim 5 , wherein the predetermined thickness is 0.1 to 4.5 μm.
7. The fabrication method for the plastic substrate for organic electroluminescent devices as claimed in claim 5 , wherein a thickness of the interface covalent bonds is 20 to 30 Å.
8. An organic electroluminescent device, comprising:
a first electrode;
a second electrode;
at least an electroluminescent layer between the first electrode and the second electrode, such that when a voltage is applied to the first electrode and the second electrode, the electroluminescent layer electroluminesces;
a first substrate beneath the first electrode; and
a second plastic substrate above the second electrode, comprising:
a plastic substrate; and
a deposition film with a predetermined thickness formed on the plastic substrate by plasma chemical vapor deposition, the film having a formula of SiO e C a H b X c Y d Z f , wherein both e≦2 and 2−e=a+b+c+d+f are satisfied, wherein X, Y and Z are selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt, Au and the elements in periodic table IA, IIA, IIIA, IVA, VA, VIA and VIIA excepting H, the deposition film having transparency of at least 97%.
9. An organic electroluminescent device, comprising:
a cathode;
an anode;
at least an organic layer between the anode and the cathode, such that when a voltage is applied to the cathode and the anode, the organic layer electroluminesces;
a first substrate beneath the cathode; and
a second plastic substrate above the anode, comprising:
a plastic substrate; and
a deposition film with a predetermined thickness formed on the plastic substrate by plasma chemical vapor deposition, the film having a formula of SiO e C a H b X c Y d Z f , wherein both e≦2 and 2−e=a+b+c+d+f are satisfied, wherein X, Y and Z are selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt, Au and the elements in periodic table IA, IIA, IIIA, IVA, VA, VIA and VIIA excepting H.
10. A plastic substrate for organic electroluminescent devices comprising:
a plastic substrate;
a deposition film with a predetermined thickness formed on the plastic substrate by plasma chemical vapor deposition, the film having a formula of SiO e C a H b X c Y d Z f , wherein both e≦2 and 2−e=a+b+c+d+f are satisfied, wherein X, Y and Z are selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt, Au and the elements in periodic table IA, IIA, IIIA, IVA, VA, VIA and VIIA excepting H, and
a plurality of interface covalent bonds disposed between the deposition film layer and the plastic substrate.
11. The plastic substrate for organic electroluminescent devices as claimed in claim 10 , wherein the predetermined thickness is 0.1 to 4.5 μm.
12. The plastic substrate for organic electroluminescent devices as claimed in claim 10 , wherein a thickness of the interface covalent bonds is 20 to 30 Å.
13. A fabrication method for the plastic substrate for organic electroluminescent devices, comprising The steps of:
providing a plastic substrate; and
performing plasma chemical vapor deposition to form a deposition film of predetermined thickness on the plastic substrate, the film having a formula of SiO e C a H b X c Y d Z f , wherein both e≦2 and 2−e=a+b+c+d+f are satisfied, wherein X, Y and Z are selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt, Au and the elements in periodic table IA, IIA, IIIA, IVA, VA, VIA and VIIA excepting H, wherein a plurality of free radicals in the plasma produce a plurality of interface covalent bonds between the deposition film layer and the plastic substrate.
14. The fabrication method for the plastic substrate for organic electroluminescent devices as claimed in claim 13 , wherein the predetermined thickness is 0.1 to 4.5 μm.
15. The fabrication method for the plastic substrate for organic electroluminescent devices as claimed in claim 13 , wherein a thickness of the interface covalent bonds is 20 to 30 Å.
16. An organic electroluminescent device, comprising:
a first electrode;
a second electrode;
at least an electroluminescent layer between the first electrode and the second electrode, such that when a voltage is applied to the first electrode and the second electrode, the electroluminescent layer electroluminesces;
a first substrate beneath the first electrode; and
a second plastic substrate above the second electrode, comprising:
a plastic substrate; and
a deposition film with a predetermined thickness formed on the plastic substrate by plasma chemical vapor deposition, the film having a formula of SiO e C a H b X c Y d Z f , wherein both e≦2 and 2−e=a+b+c+d+f are satisfied, wherein X, Y and Z are selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt, Au and the elements in periodic table IA, IIA, IIIA, IVA, VA, VIA and VIIA excepting H.