Read bias scheme for phase change memories
View Patent ↗A read bias scheme may be used for phase change memories including a chalcogenide access device and a chalcogenide memory element. Through an appropriate read bias scheme, desirable read margin can be achieved. This may result in better yield, higher reliability, and ultimately lower costs in some cases.
1. A method comprising:
forming a phase change memory element having a holding voltage tat is at least 80 percent of the threshold voltage of the element and a holding voltage greater than about 0.9 volts.
2. The method of claim 1 including forming a phase change memory element to have a threshold voltage that does not vary by more than 10 percent with programming currents varying as much as two times.
3. The method of claim 1 including forming a phase change memory element including a phase change material between a pair of electrodes.
4. The method of claim 3 including forming a phase change material with a lower electrode of titanium silicon nitride.
5. An apparatus comprising:
a phase change memory element to be read with a voltage greater than or equal to the threshold voltage of the element, said element having a holding voltage that is at least 80 percent of the threshold voltage of the element.
6. The apparatus of claim 5 wherein said element includes an upper and a lower electrode and a phase change material between said electrodes.
7. The apparatus of claim 5 wherein the phase change memory element has a threshold voltage that varies by less than 10 percent with varying programming currents.
8. The apparatus of claim 6 wherein said lower electrode includes titanium silicon nitride or carbon.
9. A system comprising:
a processor; and
a phase change memory element having a holding voltage that is at least 80 percent of the threshold voltage of the element and said holding voltage being at least about 0.9 volts.
10. The system of claim 9 wherein said wireless interface includes a dipole antenna.
11. The system of claim 9 wherein said element includes an upper and lower electrode and a phase change material between said electrodes.
12. The system of claim 11 wherein said lower electrode includes titanium silicon nitride.
13. The system of claim 9 wherein the phase change memory element has a threshold voltage that does not vary by more than 10 percent with programming currents varying by as much as two times.