Lateral phase change memory
View Patent ↗A lateral phase change cell may be formed over a semiconductor substrate. The lateral cell, in some embodiments, may be exposed to light so that the same cell may be addressed by both optical and electrical signals.
1. A method comprising:
forming a substantially planar surface; and
forming a phase change material sandwiched between a pair of horizontally spaced electrodes formed on said substantially planar surface;
forming two pairs of electrodes for two spaced cells at the same time; and
depositing a material to form said electrodes in a trench.
2. The method of claim 1 including enabling light to access said phase change material.
3. The method of claim 1 including forming a conductive line in a substrate and forming said material and said electrodes over said substrate.
4. The method of claim 3 including forming a selection device in said substrate.
5. The method of claim 4 including forming a electrical connection from said substrate to a second electrode.
6. The method of claim 5 including electrically coupling said second electrode to one of said horizontally displaced electrodes.
7. The method of claim 1 including covering at least a portion of said phase change material with an optically transmissive material.
8. The method of claim 1 including clearing the bottom of the trench to separate said electrodes and filling the remaining portion of said trench with the phase change material.
9. The method of claim 1 including covering said phase change material with a light transmissive material.