Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
View Patent ↗An aqueous chemical mechanical planarizing composition includes an oxidizer for promoting barrier removal and an abrasive. Inhibitor decreases removals of a metal interconnect. The composition has a carboxylic acid polymer having at least one repeat unit of the polymer comprising at least two carboxylic acid functionalities, a pH of less than or equal to 4 and a tantalum nitride removal rate of at least eighty percent of copper removal rate at a pad pressure of 13.8 kPa.
1. An aqueous chemical mechanical planarizing composition comprising:
an oxidizer for promoting barrier removal;
an abrasive;
an inhibitor for decreasing removal of a metal interconnect; and
water soluble polymaleic acid and wherein the chemical mechanical planarizing composition has a pH of less than 4 adjusted with an inorganic pH adjusting agent, the inorganic pH adjusting agent being an acid; and a tantalum nitride removal rate of at least eighty percent of copper removal rate at a pad pressure of 13.8 kPa.
2. The composition of claim 1 , wherein the polymaleic acid comprises a homopolymer or a copolymer.
3. The composition of claim 1 , having a pH of 1.5 to less than 4.
4. An aqueous chemical mechanical planarizing composition comprising:
0.05 to 15 wt % abrasive;
0.1 to 10 wt % oxidizing agent;
0.0025 to 2 wt % of benzotriazole; and
0.01 to 5 wt % of water soluble polymaleic acid, and wherein the pH of the chemical mechanical planarizing composition is less than 4 adjusted with an inorganic pH adjusting agent, the inorganic pH adjusting agent including an acid selected from nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid; and a tantalum nitride removal rate of at least eighty percent of copper removal rate at a pad pressure of 13.8 kPa.
5. The composition of claim 4 , wherein the polymaleic acid comprises a homopolymer or a copolymer.