Patent Assignment
Reel/Frame 014725/0685
Change of Name
Recorded: 2004-06-15
Received: 2004-06-15
Pages: 8
Assignor
RODEL HOLDINGS, INC.
Executed: 2004-01-27
Assignee
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.
1105 NORTH MARKET STREET, SUITE 1300, WILMINGTON, DE, 19899, UNITED STATES
Covered Properties
(74)
Compositions and methods for controlled polishing of copper
Application:
10/741,370 →
Chemical Mechanical Polishing Method for Reducing Slurry Reflux
Application:
10/734,945 →
Chemical Mechanical Polishing Pad Having a Process-Dependent Groove Configuration
Application:
10/734,795 →
Compositions and methods for chemical mechanical polishing silica and silicon nitride
Application:
10/722,736 →
Polishing Pad with High Optical Transmission Window
Application:
10/722,739 →
Polishing Pad Having Slurry Utilization Enhancing Grooves
Application:
10/712,186 →
Polishing Pad Having a Groove Arrangement for Reducing Slurry Consumption
Application:
10/712,362 →
Compositions and methods for polishing copper
Application:
10/712,446 →
Compositions and methods for a barrier removal
Application:
10/704,058 →
Method of second step polishing in copper CMP with a polishing fluid containing no oxidizing agent
Application:
10/692,093 →
Resilient Polishing Pad for Chemical Mechanical Polishing
Application:
10/673,002 →
Barrier Polishing Fluid
Application:
10/670,587 →
High-Rate Barrier Polishing Composition
Application:
10/670,534 →
Polishing composition for semiconductor wafers
Application:
10/664,722 →
Polishing Pads and Methods Relating Thereto
Application:
10/659,889 →
Multi-oxidizer-based slurry for nickel hard disk planarization
Application:
10/652,177 →
System and Method for Characterizing a Textured Surface
Application:
10/652,173 →
Particle-free polishing fluid for nickel-based coating planarization
Application:
10/652,176 →
Polishing Pad for Electrochemical Mechanical Polishing
Application:
10/652,175 →
Composition for Polishing Semiconductor Layers
Application:
10/634,437 →
Chemical Mechanical Planarization Compositions for Reducing Erosion in Semiconductor Wafers
Application:
10/634,964 →
Porous Polyurethane Polishing Pads
Application:
10/630,255 →
Conductive Polishing Pad with Anode and Cathode
Application:
10/421,106 →
Composite conditioning tool
Application:
10/405,542 →
Method for Planarizing Metal Interconnects
Application:
10/402,168 →
Tantalum Barrier Removal Solution
Application:
10/396,013 →
Method of Reducing Defectivity During Chemical Mechanical Planarization
Application:
10/393,070 →
Composition and Method for Polishing in Metal Cmp
Application:
10/393,074 →
Modular Barrier Removal Polishing Slurry
Application:
10/376,059 →
Polishing Pad Apparatus and Methods
Application:
10/373,513 →
Anti-Scattering Layer for Polishing Pad Windows
Application:
10/357,024 →
Tungsten Polishing Solution
Application:
10/350,859 →
Selective Barrier Metal Polishing Solution
Application:
10/349,792 →
Perforated-Transparent Polishing Pad
Application:
10/331,012 →
Planarization of silicon carbide hardmask material
Application:
10/305,572 →
Polishing Pads for Chemical Mechanical Planarization
Application:
10/193,429 →
Stacked Polishing Pad Having Sealed Edge
Application:
10/192,057 →
Polishing Pads and Methods Relating Thereto
Application:
10/137,056 →
Polishing Composition Having a Surfactant
Application:
10/121,887 →
Interchangeable Conditioning Disk Apparatus
Application:
10/109,813 →
Polishing Composition
Application:
10/081,707 →
Cmp Polishing Slurry Dewatering and Reconstitution
Application:
10/081,706 →
Polishing Pads and Methods Relating Thereto
Application:
10/071,668 →
Polishing of Semiconductor Substrates
Application:
10/068,213 →
Apparatus and Methods for Chemical-Mechanical Polishing of Semiconductor Wafers
Application:
10/061,783 →
Polishing of Semiconductor Substrates
Application:
10/005,253 →
Polishing Pad Installation Tool
Application:
10/005,268 →
Method of Fabricating a Polishing Pad Having an Optical Window
Application:
10/011,358 →
Polishing of Metal Substrates
Application:
10/043,664 →
Substrate Supporting Carrier Pad
Application:
09/933,190 →
Chemical Mechanical Planarization of Metal Substrates
Application:
09/925,209 →
Semiconductor Wafer with a Resistant Film
Application:
09/916,130 →
Base-Pad for a Polishing Pad
Application:
09/896,588 →
Composition and Method for Polishing Semiconductors
Application:
09/882,453 →
Eliminating Air Pockets Under a Polishing Pad
Application:
09/862,221 →
Polishing Pads and Methods Relating Thereto
Application:
09/862,734 →
Chemical Mechanical Polishing Compositions and Methods Relating Thereto
Application:
09/860,933 →
Composition and Method for Polishing in Metal Cmp
Application:
09/859,147 →
Polishing Pads and Methods Relating Thereto
Application:
09/848,894 →
Cmp Polishing Slurry Dewatering and Reconstitution
Application:
09/847,907 →
Dewatered Cmp Polishing Compostions and Methods for Using Same
Application:
09/836,915 →
Polishing Method Using a Reconstituted Dry Particulate Polishing Composition
Application:
09/837,506 →
Methods for Chemical-Mechanical Polishing of Semiconductor Wafers
Application:
09/833,309 →
Cmp Polishing Composition for Semiconductor Devices Containing Organic Polymer Particles
Application:
09/826,525 →
Disk for Conditioning Polishing Pads
Application:
09/819,115 →
Polishing pads and methods relating thereto
Application:
09/815,090 →
Window Portion with an Adjusted Rate of Wear
Application:
09/805,328 →
Method and Composition for Polishing by Cmp
Application:
09/803,233 →
Polishing Pad with a Transparent Portion
Application:
09/792,813 →
Polishing Pad Having an Advantageous Micro-Texture and Methods Relating Thereto
Application:
09/775,972 →
Polishing Composition
Application:
09/776,079 →
Polishing Composition and Manufacturing and Polishing Methods
Application:
09/769,058 →
Dissolution of Metal Particles Produced by Polishing
Application:
09/764,817 →
Methods for Break-in and Conditioning a Fixed Abrasive Polishing Pad
Application:
09/754,424 →