Low κ dielectric inorganic/organic hybrid films and method of making
View Patent ↗A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.
1. A dielectric film on a semiconductor or integrated circuit having a low dielectric constant, comprising:
a backbone structure comprised substantially of inorganic groups comprised of cyclic Si—O—Si groups and chains; and
organic side groups attached to said backbone structure to form a hybrid of inorganic and organic materials that provide said film having a dielectric constant of less than 4.0 and exhibiting weight loss of less than 2% per hour at 4000° C. in nitrogen and where the organic side groups do not substantially exhibit C—C bonding.
2. The dielectric film of claim 1 wherein the dielectric constant is less than 3.0.
3. The dielectric film of claim 1 wherein said dielectric film is formed of multiple layers, where at least one silicon oxide layer is formed in-situ either atop and/or below said dielectric film.
4. The dielectric film of claim 1 wherein the backbone structure is comprised Si—O—Si groups and is formed by plasma chemical vapor deposition.
5. The dielectric film of claim 1 wherein the film is formed by plasma chemical vapor deposition using organosilicon precursors.
6. The dielectric film of claim 1 wherein the film is formed by chemical vapor deposition.
7. The dielectric film of claim 1 wherein the film is formed by chemical vapor deposition using organosilicon precursors.
8. The dielectric film of claim 1 wherein the cyclic groups are comprised of rings, balls, cubes, or any combination thereof.
9. The dielectric film of claim 1 wherein the ratio of the Si in the inorganic chains to Si in the cyclic Si—O—Si groups is in the range of approximately 10:1 to 0.1:1.
10. The dielectric film of claim 1 wherein said organic side groups are selected from the group consisting of —CH 3 and —CF 3 .