Plasmon assisted enhancement of organic optoelectronic devices
View Patent ↗Optoelectronic devices and methods for their fabrication having enhanced and controllable rates of the radiative relaxation of triplet light emitters are provided exemplified by organic light emitting devices based on phosphorescent materials with enhanced emission properties. Acceleration of the radiative processes is achieved by the interaction of the light emitting species with surface plasmon resonances in the vicinity of metal surfaces. Non-radiative Förster-type processes are efficiently suppressed by introducing a transparent dielectric or molecular layer between the metal surface and the chromophore. For materials with low emission oscillator strengths (such as triplet emitters), the optimal separation distance from the metal surface is determined, thus suppressing energy transfer and achieving a significant acceleration of the emission rate.
1. An organic optoelectronic device, comprising:
an organic light emitter material;
a metal structure exhibiting strong surface plasmon resonance having a surface in the vicinity of the light emitter material; and
a source of energy for exciting the light emitter material whereby to cause the light emitter material to emit light.
2. The device of claim 1 wherein the metal exhibits strong surface plasmon resonance in the visible or infrared range of the spectrum.
3. The device of claim 1 wherein source of energy comprises charge injection from electrodes disposed to apply an electrical potential across the light emitter material and metal.
4. The device of claim 3 wherein one of said electrodes is a transparent electrode.
5. The device of claim 1 wherein source of energy comprises a light source.
6. The device of claim 5 wherein the light source is a laser generating optical pulses at a wavelength and intensity sufficient to cause the light emitter material to emit light.
7. The device of claim 6 wherein the wavelength is in the range of 150 nm to 2000 nm.
8. The device of claim 1 comprising a transparent dielectric or molecular layer between the metal surface and the light emitting material that suppresses non-radiative Förster-type energy transfer whereby to accelerate the emission rate of the emitter material.
9. The device of claim 1 wherein the organic light emitter material comprises a triplet emitter material.
10. The device of claim 9 wherein the metal exhibiting strong surface plasmon resonance is spatially separated from the triplet emitter material a distance sufficient to suppress non-radiative Förster-type energy transfer whereby to accelerate the emission rate of the triplet emitter material.
11. The device of claim 10 wherein the metal exhibiting strong surface plasmon resonance is spatially separated from the triplet emitter material by a dielectric spacer having a thickness of between 2 and 400 nm.
12. The device of claim 1 wherein the metal exhibiting strong surface plasmon resonance comprises a planar metal structure.
13. The device of claim 12 wherein the planar metal structure is a periodic nanofabricated structure.
14. The device of claim 13 wherein the planar metal structure is a grating.
15. The device of claim 12 including a transparent dielectric spacer separating the surface of the metal structure from the organic light emitter material.
16. The device of claim 15 wherein the thickness of the organic light emitter material is small in comparison with the thickness of the dielectric spacer.
17. The device of claim 16 wherein the thickness of the dielectric spacer is about 2–400 nm.
18. The device of claim 16 wherein the dielectric spacer is LiF.
19. The device of claim 1 wherein the metal exhibiting strong surface plasmon resonance comprises a metal nanostructure.
20. The device of claim 19 wherein the nanostructure is incorporated into the organic light emitter material.
21. The device of claim 19 wherein the source of energy comprises electrodes disposed to apply an electrical potential across the light emitter material and metal and wherein the nanostructure is incorporated into one of said electrodes.
22. The device of claim 19 wherein the nanostructure comprises nanoparticles.
23. The device of claim 22 wherein the nanoparticles are embedded in the light emitting material.
24. The device of claim 1 wherein the organic optoelectronic device comprises a hole-injection layer, a hole-transport layer, said light emissive material, and an electron-transport layer.
25. The device of claim 24 wherein the metal exhibiting strong surface plasmon resonance comprises a periodic nanofabricated structure embedded in the transport layer.
26. The device of claim 24 wherein the metal exhibiting strong surface plasmon resonance comprises nanoparticles embedded in the transport layer.
27. The device of claim 22 wherein each nanoparticle is encased in a shell material.
28. The device of claim 27 in which the shell material is selected from the group consisting of SiO 2 , TiO 2 , Al 2 O 3 , BaF, LiF, and CaF 2 .
29. The device of claim 22 wherein each nanoparticle is encased in organic capping molecules.
30. The device of claim 29 in which the organic capping molecules are selected from the group consisting of polymers, alkylthiols, alkylamines, alkanes, surfactants, lipids, proteins, DNA, and alkylphosphates.
31. An organic optoelectronic device, comprising:
a hole-injection layer;
a hole-transport layer;
an organic triplet light emitter material;
an electron-transport layer;
a nanofabricated metal structure exhibiting strong surface plasmon resonance in the visible range of the spectrum having a surface in the vicinity of the light emitter material;
a transparent dielectric spacer, having a thickness of between 2 and 400 nm, between the metal surface and the triplet emitter material to suppress non-radiative Förster-type energy transfer whereby to accelerate the emission rate of the emitter material; and
transparent and reflecting electrodes disposed on opposite sides of the light emitter material and metal to apply an electrical potential across there whereby to cause the light emitter material to emit light.
32. The device of claim 31 wherein the nanofabricated metal structure comprises a grating.
33. The device of claim 31 wherein the nanofabricated metal structure comprises nanoparticles encased in a shell material or in organic capping molecules and embedded in the triplet emitter material.
34. A method for fabricating an organic optoelectronic device, comprising:
providing an organic light emitter material and a source of energy for exciting the light emitter material sufficiently to cause the light emitter material to emit light; and
disposing the surface of a metal exhibiting strong surface plasmon resonance in the vicinity of the light emitter material.
35. The method of claim 34 wherein the metal exhibits strong surface plasmon resonance in the visible and infrared range of the spectrum.
36. The method of claim 34 wherein source of energy comprises charge injection from electrodes disposed to apply an electrical potential across the light emitter material and metal.
37. The method of claim 34 wherein one of said electrodes is a transparent electrode.
38. The method of claim 34 wherein source of energy comprises a light source.
39. The method of claim 38 wherein the light source is a laser generating optical pulses at a wavelength and intensity sufficient to cause the light emitter material to emit light.
40. The method of claim 39 wherein the wavelength is in the range of 150 nm to 2000 nm.
41. The method of claim 34 comprising disposing a transparent dielectric or molecular layer between the metal surface and the light emitter material that suppresses non-radiative Förster-type energy transfer whereby to accelerate the emission rate of the emitter material.
42. The method of claim 34 wherein the organic light emitter material comprises triplet emitter material.
43. The method of claim 42 comprising spatially separating the metal exhibiting strong surface plasmon resonance from the triplet emitter material a distance sufficient to suppress non-radiative Förster-type energy transfer whereby to accelerate the emission rate of the triplet emitter material.
44. The method of claim 43 comprising spatially separating the metal exhibiting strong surface plasmon resonance from the triplet emitter material by disposing a dielectric spacer having a thickness of between 2 and 400 nm between the triplet emitter and the metal surface.
45. The method of claim 34 wherein the metal exhibiting strong surface plasmon resonance comprises a planar metal structure.
46. The method of claim 45 wherein the planar metal structure is a periodic nanofabricated structure.
47. The method of claim 46 wherein the planar metal structure is a grating.
48. The method of claim 45 including disposing a transparent dielectric spacer between the surface of the metal structure from the organic light emitter material.
49. The method of claim 48 wherein the thickness of the organic light emitter material is small in comparison with the thickness of the dielectric spacer.
50. The method of claim 49 wherein the thickness of the dielectric spacer is about 2–400 nm.
51. The method of claim 48 wherein the dielectric spacer is LiF.
52. The method of claim 34 wherein the metal exhibiting strong surface plasmon resonance comprises a metal nanostructure.
53. The method of claim 52 comprising incorporating the nanostructure into the organic light emitter material.
54. The method of claim 52 wherein the source of energy comprises electrodes disposed to apply an electrical potential across the light emitter material and metal and wherein the nanostructure is incorporated into one of said electrodes.
55. The method of claim 52 wherein the nanostructure comprises nanoparticles.
56. The method of claim 55 wherein the nanoparticles are embedded in the light emitter material.
57. The method of claim 34 comprising disposing a hole-injection layer, a hole-transport layer, and an electron-transport layer, along with said light emissive material, in the organic optoelectronic device.
58. The method of claim 57 comprising embedding the metal exhibiting strong surface plasmon resonance in the transport layer as a periodic nanofabricated structure.
59. The method of claim 57 comprising embedding the metal exhibiting strong surface plasmon resonance in the transport layer as nanoparticles.
60. The method of claim 55 comprising encasing each nanoparticle in a shell material.
61. The method of claim 60 in which the shell material is selected from the group consisting of SiO 2 , TiO 2 , Al 2 O 3 , BaF, LiF, and CaF 2 .
62. The method of claim 55 comprising encasing each nanoparticle in organic capping molecules.
63. The device of claim 29 in which the organic capping molecules are selected from the group consisting of polymers, alkylthiols, alkylamines, alkanes, surfactants, lipids, proteins, DNA, and alkylphosphates.
64. A method for fabricating an organic optoelectronic device, comprising:
providing a hole-injection layer, a hole-transport layer, an organic triplet light emitter material, and an electron-transport layer;
disposing the surface of a nanofabricated metal structure, exhibiting strong surface plasmon resonance in the visible range of the spectrum, in the vicinity of the light emitter material;
disposing a transparent dielectric spacer, having a thickness of between 2 and 400 nm, between the metal surface and the triplet emitter material to suppress non-radiative Förster-type energy transfer whereby to accelerate the emission rate of the emitter material; and
disposing a transparent electrode and a second electrode on opposite sides of the light emitter material and metal whereby to apply an electrical potential across there to cause the light emitter material to emit light.
65. The device of claim 31 wherein the nanofabricated metal structure comprises a grating.
66. The device of claim 31 including embedding the nanofabricated metal structure, as nanoparticles encased in a shell material or in organic capping molecules, in the triplet emitting material.