Semiconductor laser and process for manufacturing the same
View Patent ↗This specification relates to a semiconductor laser in which an n-type semiconductor layer ( 13 ), an active layer ( 101 ), and a p-type semiconductor layer ( 24 ) are stacked in this order on a substrate ( 11 ), the active layer ( 101 ) comprising a well layer composed of InGaN, the semiconductor laser comprising an intermediate layer ( 21 ) sandwiched between the active layer ( 101 ) and the p-type semiconductor layer ( 24 ), and the intermediate layer including no intentionally added impurities and being composed of a gallium nitride-based compound semiconductor. This semiconductor laser has an extended lifetime under high optical output power conditions.
1. A semiconductor laser in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in this order on a substrate;
the semiconductor laser comprising an intermediate layer sandwiched between the active layer and the p-type semiconductor layer and composed of a gallium nitride-based compound semiconductor;
the intermediate layer having a stacked structure comprising an undoped layer including no intentionally added impurities and a diffusion-blocking layer doped with an n-type impurity and substantially not doped with a p-type impurity; and the diffusion-blocking layer being located at a side adjacent to the p-type semiconductor layer; wherein the concentration of the n-type impurity in the diffusion-blocking layer is not lower than about 1E19 cm −3 and not higher than about 6E19 cm −3 .
2. A semiconductor laser according to claim 1 , wherein the concentration of the n-type impurity in the diffusion-blocking layer is about the same or higher than that of the p-type impurity in the p-type semiconductor layer.
3. A semiconductor laser according to claim 1 , wherein the semiconductor laser is a Group III-V nitride semiconductor laser, the n-type semiconductor layer contains Si as an n-type impurity, and the p-type semiconductor layer contains Mg as a p-type impurity.
4. A semiconductor laser according to claim 1 , wherein, assuming that the thickness of the undoped layer is 1, the thickness of the diffusion-blocking layer is not less than 1/11 and not more than 11.
5. A semiconductor laser according to claim 4 , wherein the thickness of the intermediate layer is not less than 15 nm and not more than 180 nm.
6. A semiconductor laser according to claim 1 , wherein the active layer comprises a well layer composed of InGaN.
7. A process for manufacturing a semiconductor laser, comprising the steps of:
forming on a substrate an n-type semiconductor layer doped with an n-type impurity;
forming on the n-type semiconductor layer an active layer comprising a well layer composed of InGaN;
forming on the active layer an intermediate layer composed of a gallium nitride-based compound; and
forming on the intermediate layer a p-type semiconductor layer doped with a p-type impurity,
wherein the step of forming the intermediate layer comprises the steps of growing a gallium nitride-based compound semiconductor layer without adding any impurities, thereby forming an undoped layer including no intentionally added impurities, and starting to add an n-type impurity without adding a p-type impurity in the course of the growth of the gallium nitride-based compound semiconductor layer, thereby forming a diffusion-blocking layer; and wherein the concentration of the n-type impurity in the diffusion-blocking layer is not lower than about 1E19 cm −3 and not higher than about 6E19 cm −3 .
8. A process for manufacturing the semiconductor laser according to claim 7 , wherein the step of forming the n-type semiconductor layer on the substrate is performed after selectively growing a nitride-based compound semiconductor layer in the lateral direction on the substrate.