Semiconductor device and method for fabricating the same
View Patent ↗A semiconductor device has a substrate having electrode pads, a first semiconductor chip mounted on the substrate with a first adhesion layer interposed therebetween, a second semiconductor chip mounted on the first semiconductor chip with a second adhesion layer interposed therebetween and having electrode pads on the upper surface thereof, wires for bonding the electrode pads of the substrate and the electrode pads of the second semiconductor chip to each other, and a mold resin sealing therein the first and second semiconductor chips and the wires. The peripheral edge portion of the first adhesion layer is protruding outwardly from the first semiconductor chip and the peripheral edge portion of the second semiconductor chip is protruding outwardly beyond the peripheral edge portion of the first semiconductor chip.
1. A semiconductor device comprising:
a substrate having an electrode pad;
a first semiconductor chip mounted on the substrate with a first adhesion layer interposed therebetween;
a second semiconductor chip mounted on the first semiconductor chip with a second adhesion layer interposed therebetween and having an electrode pad on an upper surface thereof;
a wire for bonding the electrode pad of the substrate and the electrode pad of the second semiconductor chip to each other; and
a mold resin sealing therein the first and second semiconductor chips and the wire,
the first adhesion layer having a peripheral edge portion protruding outwardly from the first semiconductor chip,
the second semiconductor chip having a peripheral edge portion protruding outwardly beyond the outermost part of the peripheral edge portion of the first adhesion layer.
2. A semiconductor device comprising:
a substrate having an electrode pad;
a first semiconductor chip mounted on the substrate with a first adhesion layer interposed therebetween;
a second semiconductor chip mounted on the first semiconductor chip with a second adhesion layer interposed therebetween and having an electrode pad on an upper surface thereof;
a wire for bonding the electrode pad of the substrate and the electrode pad of the second semiconductor chip to each other; and
a mold resin sealing therein the first and second semiconductor chips and the wire,
the first adhesion layer having a peripheral edge portion protruding outwardly from the first semiconductor chip,
the second semiconductor chip having a peripheral edge portion protruding outwardly beyond the peripheral edge portion of the first adhesion layer,
wherein a center of the second semiconductor chip is offset from a center of the first semiconductor chip.
3. The semiconductor device of claim 2 , wherein the center of the second semiconductor chip is offset from the center of the first semiconductor chip in a direction of an edge of the peripheral edge portion of the first adhesion layer which is protruding most outwardly from the first semiconductor chip.
4. The semiconductor device of claim 2 , wherein the center of the second semiconductor chip is offset from the center of the first semiconductor chip in a direction of an edge of the peripheral edge portion of the first adhesion layer which has a largest surface height from the substrate.
5. The semiconductor device of claim 2 , wherein the center of the second semiconductor chip substantially coincides with a center of the substrate.
6. The semiconductor device of claim 1 , wherein the second adhesion layer has a film-like configuration.