Semiconductor device including a heat-transmitting and electromagnetic-noise-blocking substance and method of manufacturing the same
View Patent ↗In a multi-chip package having vertically stacked semiconductor integrated circuits (chips), a heat transmitting conductive plate ( 5 ) can be interposed between a lower layer semiconductor chip ( 3 ) and an upper layer semiconductor chip ( 4 ) and connected to a ground wiring of a substrate ( 2 ) through a bonding wire ( 9 ). A heating transmitting conductive plate ( 5 ) at the ground potential can block propagation of noise between the lower layer semiconductor chip ( 3 ) and upper layer semiconductor chip ( 4 ). Thus, the addition of noise to signals of an analog circuit in the upper layer semiconductor chip ( 4 ) can be avoided, reducing noise induced malfunctions. Furthermore, heat generated by the lower layer semiconductor chip ( 3 ) and upper layer semiconductor chip ( 4 ) can be transmitted through contact points with the heat transmitting conductive plate ( 5 ) for dissipation therefrom. This can improve heat dissipating capabilities of the semiconductor device ( 1 ) contributing to more stable operation.
1. A semiconductor device comprising a substrate, a first semiconductor chip located over the substrate, a first heat-transmitting and electromagnetic-noise-blocking substance interposed between said first heat-transmitting and electromagnetic-noise-blocking substance serving to diffuse heat generated between said first semiconductor chip and said first heat-transmitting and electromagnetic-noise-blocking substance, and block electromagnetic noise between said first semiconductor chip and said substrate, a second semiconductor chip located over said substrate with intervention of said first semiconductor chip and the first heat-transmitting and electromagnetic-noise-blocking substance therebetween, and a second heat-transmitting and electromagnetic-noise-blocking substance that is interposed between said first and second semiconductor chips, said second heat-transmitting and electromagnetic-noise-blocking substance serving to diffuse heat generated by said second semiconductor chip and block electromagnetic noise affecting the second semiconductor chip.
2. The semiconductor device of claim 1 , wherein the first semiconductor chip is located over the substrate without intervention of another semiconductor chip therebetween.
3. The semiconductor device of claim 1 , wherein at least one heat-transmitting and electromagnetic-noise-blocking substance is electrically connected to a ground wiring of said substrate for providing a ground potential.
4. The semiconductor device of claim 3 , wherein the ground wiring is formed along substantially the entire perimeter of a top face of the substrate.
5. The semiconductor device of claim 3 , wherein:
a heat dissipating member is physically connected to the ground wiring and provided on a side face of the semiconductor device.
6. The semiconductor device of claim 1 , wherein:
at least one of the first and second semiconductor chips has a digital circuit formed therein and the other one of the first and second semiconductor chips has an analog circuit formed therein.
7. The semiconductor device of claim 1 , wherein:
each of the first and second heat-transmitting and electromagnetic-noise-blocking substances is selected from the group consisting of: a conductive plate, a conductive sheet, a metal plate, a metal sheet, a conductive sheet having a shield portion and at least one lead portion extending from an edge thereof a laminate structure comprising a conductive heat transmitting layer and at least one wiring layer that electrically connects the first semiconductor chip and the second semiconductor chip, a laminate structure comprising a conductive heat transmitting layer and a plurality of connection holes formed therein for enabling direct electrical connections between the first semiconductor chip and the second semiconductor chip, a laminate structure comprising a conductive heat transmitting layer and at least one wiring layer that electrically connects at least one of the first semiconductor chip and the second semiconductor chip to substrate connections, a structure comprising aluminum, a structure comprising copper, and a structure comprising silver.