Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
View Patent ↗A structure and method are provided for correcting the optical proximity effects on a tri-tone attenuated phase-shifting mask. An attenuated rim, formed by an opaque region and an attenuated phase-shifting region, can be kept at a predetermined width across the mask or for certain types of structures. Typically, the attenuated rim is made as large as possible to maximize the effect of the attenuated phase-shifting region while still preventing the printing of larger portions of the attenuated phase-shifting region during the development process.
1. A computer-readable medium embodying instructions that when executed by a processor would provide a tool set for simulating a tri-tone attenuated phase-shifting mask including a plurality of structures, a subset of the structures including a transparent region, an opaque region, and an attenuated region, wherein the opaque region and the attenuated region form a rim, the tool set comprising:
means for analyzing optical proximity correction for the subset of the structures;
means for providing a same rim width in the subset of the structures, wherein the means for providing includes:
means for dividing a first edge of the attenuated region into a plurality of first segments;
means for dividing a second edge of the opaque region into a plurality of second segments, wherein each second segment corresponds to a certain first segment; and
means for determining whether a second segment moves with its corresponding first segment during optical proximity correction; and
means for generating a layout consistent with the means for providing.
2. A computer-readable medium embodying instructions that when executed by a processor would provide a tool set for simulating a tri-tone attenuated phase-shifting mask including a plurality of structures, a subset of the structures including a transparent region, an opaque region, and an attenuated region, wherein the opaque region and the attenuated region form a rim, the tool set comprising:
means for analyzing optical proximity correction for the subset of the structures;
means for providing a same rim width in the subset of the structures, wherein the means for providing includes:
means for downsizing the attenuated region and then upsizing the attenuated region to generate the same rim width; and
means for generating a layout consistent with the means for providing.
3. A computer-readable medium embodying instructions that when executed by a processor would provide a tool set to convert an integrated circuit layout into an attenuated phase-shifting mask layout for fabricating the integrated circuit, the tool set comprising:
means for identifying a subset of structures in the integrated circuit layout;
means for converting the subset of structures into the mask layout, wherein each converted structure includes a transparent region, an opaque region, and an attenuated region, wherein the opaque region and the attenuated region form a rim; means for analyzing optical proximity correction for a plurality of converted structures;
means for providing a same rim width for the plurality of converted structures, wherein the means for providing includes:
means for dividing a first edge of the attenuated region into a plurality of first segments;
means far dividing a second edge of the opaque region into a plurality of second segments, wherein each second segment corresponds to a certain first segment;
means for determining whether a second segment moves with its corresponding first segment during optical proximity correction; and
means for generating a layout consistent with the means for providing.
4. A computer-readable medium embodying instructions that when executed by a processor would provide a tool set to convert an integrated circuit layout into an attenuated phase-shifting mask layout for fabricating the integrated circuit, the tool set comprising:
means for identifying a subset of structures in the integrated circuit layout;
means for converting the subset of structures into the mask layout, wherein each converted structure includes a transparent region, an opaque region, and an attenuated region, wherein the opaque region and the attenuated region form a rim;
means for analyzing optical proximity correction for a plurality of converted structures;
means for providing a same rim width for the plurality of converted structures, wherein the means for providing includes:
means for downsizing the attenuated region and then upsizing the attenuated region to generate the same rim width; and
means for generating a layout consistent with the means for providing.