Pattern formation method
View Patent ↗After forming a resist film of a chemically amplified resist material including a base polymer, an acid generator for generating an acid through irradiation with light and lactone, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
1. A pattern formation method comprising the steps of:
forming a resist film of a chemically amplified resist material including a base polymer and an acid generator for generating an acid through irradiation with light, the material further including sultone, carbohydrate sultone, sultine, or carbohydrate sultine;
performing pattern exposure by selectively irradiating said resist film with exposing light while supplying an immersion solution onto said resist film; and
forming a resist pattern by developing said resist film after the pattern exposure.
2. The pattern formation method of claim 1 ,
wherein said immersion solution is water.
3. The pattern formation method of claim 1 ,
wherein said immersion solution is perfluoropolyether.
4. The pattern formation method of claim 1 ,
wherein said exposing light is KrF excimer laser, ArF excimer laser, or F 2 laser.
5. The pattern formation method of claim 1 ,
wherein said lactone is melavonic lactone, y-butyrolactone, y-valerolactone or ÿ-valerolactone.
6. The pattern formation method of claim 1 ,
wherein said polymer containing said lactone, said sultone, or said sultine is poly(acrylic ester) or poly(methacrylic ester).
7. The pattern formation method of claim 1 ,
wherein said carbohydrate lactone is D-gluconic acid δ-lactone, β-D-glucofurannurone acid y-lactone or L-mannal acid di-y-lactone.
8. The pattern formation method of claim 1 ,
wherein said sultone is pentane-2,5-sultone or naphthalene-1,8-sultone.
9. The pattern formation method of claim 1 ,
wherein said sultine is 3H-2,1-benzoxathiol=l-oxide.