Granted Patent B2

US 6,953,990 · App. 10/666,363 · Granted Oct 11, 2005

Abstract

Claims (20)

1. A wafer-level package, comprising:

a first wafer comprising a bond pad;

an optoelectronic device on the first wafer; and

a second wafer comprising a gasket, the second wafer being attached to the first wafer by a bond between the gasket end the bonding pad.

2. The package of claim 1 , wherein the second wafer comprises a minor for reflecting a light from the optoelectronic device through the first wafer.

3. The package of claim 1 , wherein the first wafer further comprises a contact pad, the package further comprising a via contact through the second wafer connected to the contact pad.

4. The package of claim 1 , wherein the second wafer defines a cavity for accommodating the optoelectronic device.

5. The package of claim 1 , further comprising a bonding layer over the gasket.

6. The package of claim 5 , wherein the bonding layer and the bonding pad comprise gold.

7. The package of claim 6 , wherein the bond between the gasket and the bonding pad is a thermocompression bond.

8. The package of claim 7 , further comprising a metal barrier layer between at least one of (1) the bonding layer and the gasket, and (2) the bonding pad and the first wafer.

9. The package of claim 8 , wherein the metal barrier layer is selected from the group consisting of (a) titanium tungsten/titanium tungsten nitrogen oxide/titanium tungsten, (b) titanium/platinum, (c) chromium/platinum, (d) tungsten silicon nitride, (e) titanium silicon nitride, (f) silicon dioxide/titanium, (g) silicon dioxide/chromium, and (h) silicon dioxide/titanium tungsten.

10. The package of claim 1 , wherein the bond between the gasket and the bonding pad is selected from a group consisting of a reaction bond and a solder bond.

11. The package of claim 1 , wherein the gasket comprises a treaded surface.

12. The package of claim 1 , wherein the optoelectronic device is selected from the group consisting of edge-emitting laser and a vertical cavity surface-emitting laser (VCSEL).

13. The package of claim 1 , wherein the first wafer further comprises at least one of an active circuit and a passive circuit.

14. The package of claim 1 , wherein the first wafer further comprises an integrated lens.

15. The package of claim 14 , wherein the integrated lens comprises a diffractive optical element.

16. The package of claim 1 , wherein the second wafer comprises an integrated lens and the optoelectronic device emits a light through the integrated lens.

17. The package of claim 16 , wherein the integrated lens comprises a diffractive optical element.

Assignments (13)