Transistor with group III/VI emitter
View Patent ↗A transistor includes a base, a collector, and an emitter comprising a group III/VI semiconductor. Microcircuits having at least one metal oxide semiconductor (MOS) transistor and the previously described transistor are provided. Processes for manufacturing a transistor and a BiMOS microcircuit are also provided.
1. A process for manufacturing a BiMOS microcircuit, comprising:
forming a buried layer of a first semiconductor material;
forming a gate oxide for at least one MOS transistor;
forming a poly-Si layer on the gate oxide;
forming a base of a second semiconductor material;
forming a source and a drain for the MOS transistor of a third semiconductor material; and
forming an emitter of a group III/VI semiconductor on the base, the group III/VI semiconductor selected from the group consisting of GaS, GaSe, GaTe, InS, InSe, InTe, and TIS.
2. The process of claim 1 , further comprising:
after forming the buried layer, isolating the buried layer into pockets.
3. The process of claim 1 , further comprising forming a deep N+collector.
4. The process of claim 1 , further comprising:
utilizing part of the buried layer as a collector; and
forming contacts to the base, emitter, collector, source, drain, and poly-Si layer on the gate oxide.
5. The process of claim 1 , further comprising forming wells of the second semiconductor material in the buried layer.
6. A process for manufacturing a heterojunction bipolar transistor (HBT), comprising:
forming a collector of a first semiconductor;
forming a base of a second semiconductor; and
forming an emitter of a group III/VI semiconductor selected from the group consisting of GaS, GaSe, GaTe, InS, InSe, InTe, and TIS.
7. A process for manufacturing a transistor, comprising:
forming a base;
forming a collector; forming an emitter of a group III/VI semiconductor selected from the group consisting of GaS, GaSe, GaTe, InS, InSe, InTe, and TIS; and
forming an emitter contact coupled to the emitter.
8. The process of claim 7 , wherein forming a base comprises forming a base of a p-type semiconductor material and forming a collector comprises forming a collector of an n-type semiconductor material.
9. The process of claim 7 , wherein forming a base comprises forming a base of an n-type semiconductor and forming a collector comprises forming a collector of a p-type semiconductor and further comprising doping the group III/VI semiconductor to behave as a p-type semiconductor.