Method of using films having optimized optical properties for chemical mechanical polishing endpoint detection
View Patent ↗A method of using films having optimized optical properties for chemical mechanical polishing (CMP) endpoint detection. Specifically, one embodiment of the present invention includes a method for improving chemical mechanical polishing endpoint detection. The method comprises the step of depositing a dielectric layer over a reflectance stop layer. The reflectance stop layer is disposed above a component that is disposed on a semiconductor wafer. During a determination of the thickness of the dielectric layer using a reflected signal of light, the reflectance stop layer substantially reduces any light from reflecting off of the component. Therefore, the present invention provides a method and system that provides more accurate endpoint detection during a CMP process of semiconductor wafers. As a result of the present invention, an operator of a CMP machine knows precisely when to stop a CMP process of a semiconductor wafer. Furthermore, the present invention enables the operator of the CMP machine to know within a certain accuracy the film (e.g., dielectric layer) thickness remaining after the CMP process of the semiconductor wafer. Moreover, the present invention essentially eliminates excessive chemical mechanical polishing of the semiconductor wafer. As such, not as much dielectric material needs to be deposited on the wafer in order to compensate for excessive chemical mechanical polishing of the semiconductor wafer. Therefore, the present invention is able to reduce fabrication costs of semiconductor wafers.
1. A structure, comprising:
a light transmissive dielectric layer having a planar surface portion disposed above, and substantially vertically aligned with, an underlying reflective patterned conductive line, the light transmissive dielectric layer further having a non-planar portion, and a non-planar non-light-transmissive region disposed on the non-planar portion of the light transmissive dielectric layer.
2. The structure of claim 1 , wherein the non-light-transmissive region includes a non-planar anti-reflective layer embedded therein.
3. The structure of claim 2 , wherein the anti-reflective layer comprises a material selected from the group consisting of amorphous silicon and silicon oxynitride.
4. The structure of claim 3 , wherein the dielectric layer is disposed over a semiconductor wafer.