Semiconductor device and making thereof
View Patent ↗By forming a conductive smoothing layer over the bottom electrode and/or a capacitor dielectric, a MIM capacitor with improved reliability due to reduction of geometrically enhanced electric fields and electrode smoothing is formed. In one embodiment, layer including a refractory metal or a refractory metal-rich nitride, is formed over a first capping layer formed of a refractory nitride. In addition, a second refractory metal or a refractory metal-rich nitride layer may be formed on the capacitor dielectric. The smoothing layer could also be used in other semiconductor devices, such as transistors between a gate electrode and a gate dielectric.
1. A semiconductor device comprising:
a semiconductor substrate;
a first electrode formed over the semiconductor substrate;
a first conductive smoothing layer formed over the first electrode, wherein the first conductive smoothing layer has a surface roughness less than that of the first electrode;
a dielectric layer formed on the first conductive smoothing layer;
a second electrode formed over the dielectric layer; and
a second conductive smoothing layer formed between the dielectric layer and the second electrode, wherein the second conductive smoothing layer has a roughness less than that of the second electrode and wherein the second conductive smoothing layer comprises a refractory metal.
2. The semiconductor device of claim 1 , wherein the first electrode comprises a first layer comprising a metal and a second layer comprising a refractory nitride and the second electrode comprises a metal.
3. The semiconductor device of claim 1 , wherein the first electrode and the second electrode comprise a refractory nitride.
4. The semiconductor device of claim 3 , wherein the refractory nitride comprises a material selected from the group consisting of titanium nitride and tantalum nitride.
5. The semiconductor device of claim 3 , wherein the first conductive smoothing layer comprises titanium rich nitride.
6. The semiconductor device of claim 1 , wherein the dielectric layer comprises a high dielectric constant material.
7. The semiconductor device of claim 1 , wherein the first electrode, the first conductive smoothing layer, the dielectric layer and the second electrode are part of a metal-insulator-metal (MIM) capacitor.
8. The he semiconductor device of claim 7 , further comprising:
a capping layer over the first electrode, wherein the capping layer comprises a refractory nitride and the first electrode comprises a metal.
9. A semiconductor device comprising:
a conductive layer;
a smoothing layer formed in contact with the conductive layer, wherein the smoothing layer has a surface roughness less than that of the conductive layer and the smoothing layer comprises titanium rich nitride; and
a dielectric layer formed above and in contact with the smoothing layer.
10. The semiconductor device of claim 9 , wherein the conductive layer comprises titanium nitride and the smoothing layer comprises titanium.
11. The semiconductor device of claim 9 , wherein the conductive layer, the smoothing layer and the dielectric layer are part of a device selected from the group consisting of a transistor and a capacitor.
12. The semiconductor device of claim 9 , wherein the conductive layer comprises a first layer comprising a metal and a second layer comprising a refractory nitride.
13. The semiconductor device of claim 9 , wherein the dielectric layer is a high dielectric constant material.
14. A semiconductor device comprising:
a semiconductor substrate;
a first electrode formed over the semiconductor substrate, wherein the first electrode comprises a first layer comprising metal and a second layer over the first layer, wherein the second layer comprises a refractory nitride;
a first smoothing layer formed over the first electrode, wherein the first smoothing layer comprises titanium rich nitride;
a dielectric layer formed on the first smoothing layer; and
a second electrode formed over the dielectric layer, wherein the second electrode comprises a third layer comprising a refractory nitride and a fourth layer over the third layer, wherein the fourth layer comprises a metal.
15. The semiconductor device of claim 14 , wherein the refractory nitride comprises a material selected from the group consisting of titanium nitride and tantalum nitride.
16. The semiconductor device of claim 15 , wherein the refractory metal comprises titanium.
17. A semiconductor device comprising:
a semiconductor substrate;
a first electrode formed over the semiconductor substrate;
a capping layer over the first electrode, wherein the capping layer comprises a refractory nitride and the first electrode comprises a metal;
a first conductive smoothing layer formed over the capping layer, wherein the first conductive smoothing layer has a surface roughness less than that of the capping layer;
a dielectric layer formed on the first conductive smoothing layer; and
a second electrode formed over the dielectric layer.