Semiconductor device including multiple wiring layers and circuits operating in different frequency bands
View Patent ↗Plural elements forming a high frequency device in one chip are provided by forming a resistor element and the lower electrode of a capacitor element from one identical polycrystal silicon film over a substrate; forming the gate electrode of a power MISFET, upper electrode of the capacitor element, gate electrode of an n-channel type MISFET and gate electrode of a p-channel type MISFET from an identical polycrystal silicon film different from the other polycrystal silicon film and a WSi film; forming a capacitor element having a wiring formed on a silicon oxide film deposited over the substrate as a lower electrode and a wiring formed on the silicon oxide film as the upper electrode in the region MIN; forming a spiral coil in a region IND using an aluminum alloy film identical with that deposited on a silicon oxide film; and forming a bonding pad in a region PAD.
1. A semiconductor device in which the first wiring layer and a second wiring layer above the first wiring layer are formed over a semiconductor substrate, and a first capacitor element having a first lower electrode and a first upper electrode, and a second capacitor element having a second lower electrode and a second upper electrode are formed over the semiconductor substrate,
wherein the first lower electrode and the second lower electrode are formed, respectively, to the first wiring layer and the second wiring layer,
wherein a first circuit operating in a first frequency band and a second circuit operating in a second frequency band are formed over the semiconductor substrate,
wherein the first capacitor element is included in the first circuit and the second capacitor element is included in the second circuit, and
wherein the frequency included in the first frequency band is lower than the frequency included in the second frequency band.
2. A semiconductor device according to claim 1 , wherein the first frequency band includes 100 MHz and the second frequency band includes 800 MHz to 900 MHz or 1.8 GHz to 1.9 GHz.
3. A semiconductor device according to claim 2 , wherein the first lower electrode and the first upper electrode comprise silicon as a main ingredient and the second lower electrode and the second upper electrode comprise a metal as a main ingredient.
4. A semiconductor device according to claim 2 , wherein the second circuit is formed with plural stages of circuits and the second capacitor element forms an inter-stage matching circuit between plural stages of circuits in the second circuit.