Patent Assignment
Reel/Frame 027946/0388
Assignment of Assignor's Interest
Recorded: 2012-03-28
Pages: 5
Assignor
RENESAS ELECTRONICS CORPORATION
Executed: 2012-03-01
Assignee
MURATA MANUFACTURING CO., LTD.
10-1, HIGASHIKOTARI 1-CHOME, NAGAOKAKYO-SHI, KYOTO, JAPAN
Covered Properties
(57)
High Frequency Power Amplifier Module and Wireless Communication Apparatus
High Frequency Power Amplifier Module and Wireless Communication Apparatus
Electronic Apparatus and Design Method
Semiconductor Device
High Frequency Power Amplifier and Wireless Communication Module
High Frequency Power Amplifier and Wireless Communication Module
Semiconductor Device, Its Manufacturing Method, and Radio Communication Device
High-Frequency Power Amplifier Circuit and Electronic Part for Communication
High Frequency Power Amplifier Module and Wireless Communication System
Semiconductor Integrated Circuit Device
Semiconductor Device Including Multiple Wiring Layers and Circuits Operating in Different Frequency Bands
Semiconductor Device and Manufacturing the Same
High Frequency Power Amplifier Module and Wireless Communication Apparatus
Semiconductor Device
Electronic Component for High Frequency Power Amplifier and Radio Communication System
High Frequency Power Amplifier and Wireless Communication Module
High Frequency Power Amplifier Circuit, High Frequency Power Amplifier Electronic Component and Method Thereof
Semiconductor Device
Electric Component for Communication Device and Semiconductor Device for Switching Transmission and Reception
High Frequency Power Amplifier Circuit and Electronic Component for High Frequency Power Amplifier
High Frequency Power Amplifier Circuit
Semiconductor Device and Manufacturing Method Therefor
High Frequency Power Amplifier and Wireless Communication Module
Semiconductor Integrated Circuit for High Frequency Power Amplifier and Electric Components with the Semiconductor Integrated Circuit
High Frequency Power Amplifier Circuit and Electric Component for High Frequency Power Amplifier
Semiconductor Device
Semiconductor Device, Its Manufacturing Method, and Radio Communication Device
Electronics Parts for High Frequency Power Amplifier
Semiconductor Integrated Circuit for High Frequency Power Amplifier, Electronic Component for High Frequency Power Amplifier, and Radio Communication System
High Frequency Power Amplifier Circuit
Semiconductor Device and a Method of Manufacturing the Same
Semiconductor Device and Manufacturing the Same
High-Frequency Power Amplifier Circuit and Electronic Part for Communication
Semiconductor Integrated Circuit Device and High Frequency Power Amplifier Module
Semiconductor Integrated Circuit Device and High Frequency Power Ampifier Module
High Frequency Power Amplifier Circuit and Radio Communication System
Semiconductor Device
Radio Frequency Power Amplifying Module with Hetero Junction Bipolar Transistor
Rf Power Module
Rf Power Amplifier
A Multilayered Semiconductor Structure Containing a Misfet, a Resistor, a Capacitor, and an Inductor
High Frequency Power Amplifier Circuit, High Frequency Power Amplifier Electronic Component and Method Thereof
Electric Component for Communication Device and Semiconductor Device for Switching Transmission and Reception
Semiconductor Device and Manufacturing Method of the Same
High Frequency Power Amplifier Circuit and Electronic Component for High Frequency Power Amplifier
Electronics Parts for High Frequency Power Amplifier
Semiconductor Device
Electronic Component for Communication Device and Semiconductor Device for Switching Transmission and Reception
High Frequency Power Amplifier Circuit and Electronic Component for High Frequency Power Amplifier
Rf Power Amplifier Apparatus and Power Supply Circuit for Controlling-Power Supply Voltage to Rf Power Amplifier
Semiconductor Device and Manufacturing the Same
Radio Frequency (Rf) Power Amplifier and Rf Power Amplifier Apparatus
Semiconductor Device and Manufacturing the Same
Rf Power Module
Semiconductor Device and Manufacturing the Same
Rf Power Amplifier Apparatus and Power Supply Circuit for Controlling Power-Supply Voltage to Rf Power Amplifier
Radio Frequency (Rf) Power Amplifier and Rf Power Amplifier Apparatus
Related Assignments
(12)
Other recorded transfers of the patents in this record — the chain of ownership.
Merger
Jul 7, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024662/0280 →
Merger and Change of Name
Jul 29, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024755/0338 →
Merger
Jul 30, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025204/0512 →
Merger
Aug 13, 2010
From: RENESAS TECHNOLOGY CORP.
To: NEC ELECTRONICS CORPORATION
Reel/Frame 024879/0190 →
Change of Name
Aug 13, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024864/0635 →
Merger
Mar 25, 2011
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 026109/0269 →
Assignment of Assignor's Interest
Jan 9, 2012
From: RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 027534/0453 →
Assignment of Assignor's Interest
Jan 19, 2012
From: HITACHI ULSI SYSTEMS CO., LTD.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 027558/0986 →
Assignment of Assignor's Interest
Jan 19, 2012
From: RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 027558/0950 →
Assignment of Assignor's Interest
Jan 19, 2012
From: RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 027558/0846 →
Change of Name
Jan 19, 2012
From: EASTERN JAPAN SEMICONDUCTOR TECHNOLOGIES, INC.
To: RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.
Reel/Frame 027558/0681 →
Change of Name
Jan 19, 2012
From: HITACHI TOHBU SEMICONDUCTOR, LTD.
To: EASTERN JAPAN SEMICONDUCTOR TECHNOLOGIES, INC.
Reel/Frame 027558/0488 →